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IXFA14N85XHV

型号：

IXFA14N85XHV

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

383 K

下载PDF手册
Preliminary Technical Information  
X-Class HiPerFETTM  
Power MOSFET  
VDSS = 850V  
ID25 = 14A  
RDS(on) 550m  
IXFA14N85XHV  
IXFP14N85X  
IXFH14N85X  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263HV  
Fast Intrinsic Diode  
G
S
D (Tab)  
TO-220 (IXFP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
850  
850  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
S
D (Tab)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
14  
35  
A
A
TO-247 (IXFH)  
IA  
TC = 25C  
TC = 25C  
7
A
EAS  
500  
mJ  
G
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
D
D (Tab)  
S
460  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
High Voltage Package  
Low RDS(ON) and QG  
Avalanche Rated  
Low Package Inductance  
FC  
Md  
Mounting Force (TO-263HV)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-263HV  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
850  
V
V
3.5  
5.5  
Applications  
100 nA  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
10 A  
1 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
550 m  
DS100761A(06/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFA14N85XHV IXFP14N85X  
IXFH14N85X  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
4.6  
7.7  
S
RGi  
1.0  
Ciss  
Coss  
Crss  
1043  
1110  
17  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
55  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
177  
td(on)  
tr  
td(off)  
tf  
16  
30  
36  
13  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 10(External)  
Qg(on)  
Qgs  
30  
7
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
17  
RthJC  
RthCS  
0.27 C/W  
TO-220  
TO-247  
0.50  
0.21  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
14  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
56  
1.4  
V
trr  
QRM  
IRM  
116  
0.9  
15.5  
ns  
IF = 7A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFA14N85XHV IXFP14N85X  
IXFH14N85X  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
14  
12  
10  
8
V
= 10V  
GS  
V
= 10V  
GS  
24  
20  
16  
12  
8
9V  
8V  
9V  
8V  
6
4
7V  
6V  
7V  
6V  
4
2
0
0
0
0
0
1
2
3
4
5
6
7
8
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 7A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
14  
12  
10  
8
4.2  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
9V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 14A  
D
6
I
= 7A  
D
4
6V  
5V  
2
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
4
8
12  
16  
20  
24  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 7A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
T = 125oC  
J
T = 25oC  
J
V
GS(th)  
4
8
12  
16  
20  
24  
28  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFA14N85XHV IXFP14N85X  
IXFH14N85X  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
16  
14  
12  
10  
8
14  
12  
10  
8
T
J
= 125oC  
25oC  
- 40oC  
6
6
4
4
2
2
0
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.5  
0.3  
1
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
14  
12  
10  
8
45  
40  
35  
30  
25  
20  
15  
10  
5
T
= - 40oC  
J
25oC  
125oC  
6
T
J
= 125oC  
4
T
J
= 25oC  
2
0
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
0
2
4
6
8
10  
12  
14  
16  
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10,000.0  
1,000.0  
100.0  
10.0  
10  
8
V
= 425V  
DS  
I
I
= 7A  
D
G
= 10mA  
C
iss  
6
C
oss  
rss  
4
2
1.0  
= 1 MHz  
f
C
0
0.1  
0
5
10  
15  
20  
25  
30  
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFA14N85XHV IXFP14N85X  
IXFH14N85X  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Output Capacitance Stored Energy  
100  
10  
20  
18  
16  
14  
12  
10  
8
R
DS(  
on  
Limit  
)
25μs  
100μs  
1
6
1ms  
0.1  
0.01  
T
= 150oC  
= 25oC  
J
4
T
C
10ms  
2
Single Pulse  
DC  
0
60070010
0
100  
200  
300  
400  
500  
800  
900  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.5  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_14N85X(S4-D901) 11-01-16  
IXFA14N85XHV IXFP14N85X  
IXFH14N85X  
TO-263HV Outline  
1 = Gate  
2 = Source  
3 = Drain  
TO-220 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-247 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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