IXGR 24N60CD1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS247OUTLINE
IC = IT; VCE = 10 V,
9
17
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
1500
170
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IT, VGE = 15 V, VCE = 0.5 VCES
Qg
55
13
17
nC
nC
nC
Qge
Qgc
td(on)
tri
td(off)
tfi
15
25
ns
ns
ns
ns
Inductive load, TJ = 25°C
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
IC = IT, VGE = 15 V, L = 300 µH
VCE = 0.8 • VCES, RG = Roff = 18 Ω
75 140
60 110
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Dim.
Millimeter
Inches
Min. Max. Min. Max.
Eoff
0.24 0.36 mJ
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
td(on)
tri
15
25
ns
ns
Inductive load, TJ = 125°C
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
IC = IT, VGE = 15 V, L = 300 µH
Eon
td(off)
tfi
1
mJ
ns
VCE = 0.8 • VCES, RG = Roff = 18 Ω
C
D
E
0.61
0.80
20.80 21.34
15.75 16.13
.024 .031
.819 .840
.620 .635
130
110
0.6
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ns
e
L
L1
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
Eoff
mJ
3.81
4.32
RthJC
RthCK
0.157 K/W
K/W
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
0.15
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = IT, VGE = 0 V,
TJ = 150°C
1.6
2.5
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % TJ = 25°C
IRM
trr
IF = IT, VGE = 0 V, -diF/dt = 100 A/µs
VR = 100 V
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
6
A
ns
ns
TJ = 100°C 100
TJ = 25°C 25
RthJC
1.65 K/W
Notes: 1. IT = 24A
2. See IXGH24N60CD1 data sheet for characteristic curves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
