找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

MXUPR5E3

型号:

MXUPR5E3

品牌:

MICROSEMI[ Microsemi ]

页数:

2 页

PDF大小:

116 K

UPR5e3, UPR10e3, UPR15e3  
2.5 Amp High Efficiency Ultrafast Rectifier  
KEY FEATURES  
DESCRIPTION  
The Microsemi UPR5e3, UPR10e3, and UPR15e3 Powermite® high  
efficiency rectifiers are RoHS compliant and offers optimized forward  
voltage characteristics with reverse blocking capabilities up to 150 Volts.  
They are ideal for surface mount applications that operate at high  
frequencies.  
ƒ Low thermal resistance DO-216 package for  
higher current operation  
ƒ Utrasfast recovery time of 25 ns  
ƒ RoHS Compliant with e3 suffix part number  
ƒ Efficient heat path with Integral locking  
bottom metal tab  
ƒ Low forward voltage  
ƒ Full metallic bottom eliminates flux  
entrapment  
ƒ Compatible with automatic insertion  
ƒ Low profile-maximum height of 1mm  
ƒ Options for screening in accordance with  
MIL-PRF-19500 for JAN, JANTX, and  
JANTXV are available by adding MQ, MX, or  
MV prefixes respectively to part numbers.  
For example, designate MXUPR5e3 for a  
JANTX (consult factory for Tin-Lead plating).  
ƒ Optional 100% avionics screening available  
by adding MA prefix for 100% temperature  
cycle, thermal impedance and 24 hours  
HTRB (consult factory for Tin-Lead plating)  
In addition to its size advantages, Powermite® package features include a  
full metallic bottom that eliminates possibility of solder flux entrapment  
during assembly and a unique locking tab acts as an efficient heat path  
from die to mounting plane for external heat sinking with very low thermal  
resistance junction to case (bottom). Its innovative design makes this  
device ideal for use with automatic insertion equipment.  
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com  
ABSOLUTE MAXIMUM RATINGS AT 25º C  
(UNLESS OTHERWISE SPECIFIED)  
Rating  
Symbol  
Value  
Unit  
APPLICATIONS/BENEFITS  
VRWM  
VRWM  
VRWM  
Working Peak Reverse Voltage UPR5e3  
Working Peak Reverse Voltage UPR10e3  
Working Peak Reverse Voltage UPR15e3  
50  
100  
150  
V
V
V
ƒ Switching and Regulating Power Supplies.  
ƒ Charge Pump Circuits  
ƒ Reduces reverse recovery loss with low IRM  
ƒ Small 8.45 mm2 foot print  
Average Rectified Output Current (at rated  
VRWM, TC =75ºC)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half-sine wave  
2.5  
25  
A
A
Io  
(See mounting pad details next page)  
IFSM  
MECHANICAL & PACKAGING  
Storage Temperature  
Junction Temperature  
-55 to +150  
-55 to +150  
ºC  
ºC  
TSTG  
TJ  
CASE: Void-free transfer molded  
thermosetting epoxy compound meeting  
UL94V-0  
FINISH: Annealed matte-Tin plating over  
copper and readily solderable per MIL-  
STD-750 method 2026 (consult factory for  
Tin-Lead plating)  
POLARITY: See figure (left)  
MARKING: UPR5e3: R05•  
UPR10e3: R10•  
THERMAL CHARACTERISTICS  
(UNLESS OTHERWISE SPECIFIED)  
Thermal Resistance  
Junction-to-case (bottom)  
Junction-to-ambient (1)  
(1) When mounted on FR-4 PC board using 1 oz copper with recommended minimum foot print  
RθJC  
RθJA  
10  
240  
ºC/ Watt  
ºC/ Watt  
UPR15e3: R15•  
WEIGHT: 0.016 grams (approx.)  
Package dimension on last page  
Tape & Reel option: 12 mm tape per  
Standard EIA-481-B, 3000 on 7 inch reel  
and 12,000 on 13” reel  
DO-216  
See further details and dimensions on last page  
Copyright © 2007  
6-26-2007 Rev B  
Microsemi  
Page 1  
UPR5e3, UPR10e3, UPR15e3  
2.5 Amp High Efficiency Ultrafast Rectifier  
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)  
Parameter  
Symbol Conditions  
Min Typ.  
Max Units  
Forward Voltage (Note 1)  
IF = 2.0 Amps  
0.975  
V
Forward Voltage (Note 1)  
0.895  
V
IF = 2.0 Amps, TJ = 100C  
Reverse Current  
Reverse Current  
VR = VRWM, TJ = 25 ºC  
VR = VRWM, TJ = 100 ºC  
2.0  
50  
µA  
µA  
IR  
IR  
Reverse Recovery Time  
25  
ns  
IF = 0.5 A; IR = 1.0 A: IREC = 0.25 A  
trr  
Note: 1 Short duration test pulse used to minimize self – heating effect.  
PACKAGE & MOUNTING PAD DIMENSIONS  
DO-216 Package (All dimensions +/-.005 inches)  
MOUNTING PAD in inches  
Copyright © 2007  
6-26-2007 Rev B  
Microsemi  
Page 2  
厂商 型号 描述 页数 下载

MICROSEMI

MXUMA100A [ Trans Voltage Suppressor Diode, 500W, 100V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, ULTRAMITE, 2 PIN ] 4 页

MICROSEMI

MXUMA10A [ Trans Voltage Suppressor Diode, 500W, 10V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, ULTRAMITE, 2 PIN ] 4 页

MICROSEMI

MXUMA10CA [ Trans Voltage Suppressor Diode, 500W, 10V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, ULTRAMITE, 2 PIN ] 4 页

MICROSEMI

MXUMA110A [ Trans Voltage Suppressor Diode, 500W, 110V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, ULTRAMITE, 2 PIN ] 4 页

MICROSEMI

MXUMA110CA [ Trans Voltage Suppressor Diode, 500W, 110V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, ULTRAMITE, 2 PIN ] 4 页

MICROSEMI

MXUMA11A [ Trans Voltage Suppressor Diode, 500W, 11V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, ULTRAMITE, 2 PIN ] 4 页

MICROSEMI

MXUMA11CA [ Trans Voltage Suppressor Diode, 500W, 11V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, ULTRAMITE, 2 PIN ] 4 页

MICROSEMI

MXUMA120A [ Trans Voltage Suppressor Diode, 500W, 120V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, ULTRAMITE, 2 PIN ] 4 页

MICROSEMI

MXUMA120CA [ Trans Voltage Suppressor Diode, 500W, 120V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, ULTRAMITE, 2 PIN ] 4 页

MICROSEMI

MXUMA12A [ Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, ULTRAMITE, 2 PIN ] 4 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.225166s