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IXFH22N60X2A

型号：

IXFH22N60X2A

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

238 K

下载PDF手册
Advance Technical Information  
X2-Class HiPerFETTM  
Power MOSFET  
VDSS = 600V  
ID25 = 22A  
IXFH22N60X2A  
RDS(on) 145m  
AEC Q101 Qualified  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
600  
600  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
G
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
D
D (Tab)  
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
22  
44  
A
A
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
IA  
TC = 25C  
TC = 25C  
5
1
A
J
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
390  
TJ  
-55 ... +150  
150  
C  
C  
C  
Features  
TJM  
Tstg  
-55 ... +150  
International Standard Package  
Low RDS(ON) and QG  
Avalanche Rated  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Low Package Inductance  
Md  
Mounting Torque  
1.13 / 10  
6
Nm/lb.in  
g
Weight  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1.5mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
600  
V
V
Switch-Mode and Resonant-Mode  
3.5  
5.0  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
100 nA  
IDSS  
10 A  
1.5 mA  
Robotics and Servo Controls  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
145 m  
DS100914A(6/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFH22N60X2A  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
8
14  
S
RGi  
1.0  
Ciss  
Coss  
Crss  
2190  
1450  
1.3  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
92  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
330  
td(on)  
tr  
td(off)  
tf  
30  
37  
42  
18  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 10(External)  
Qg(on)  
Qgs  
37  
12  
14  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.32 C/W  
C/W  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
22  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
88  
1.4  
V
trr  
QRM  
IRM  
145  
890  
12  
ns  
IF = 11A, -di/dt = 100A/μs  
nC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFH22N60X2A  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
9V  
GS  
V
= 10V  
9V  
GS  
20  
16  
12  
8
8V  
7V  
8V  
7V  
6V  
6V  
5V  
4
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 11A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
GS  
20  
16  
12  
8
V
= 10V  
GS  
8V  
7V  
I
= 22A  
D
I
= 11A  
D
6V  
4
5V  
4V  
0
1
2
3
4
5
6
7
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 11A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
T
= 125oC  
J
BV  
DSS  
T
= 25oC  
J
V
GS(th)  
10  
20  
30  
40  
50  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
ID - Amperes  
TJ - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFH22N60X2A  
Fig. 8. Input Admittance  
Fig. 7. Maxing Drain Current vs. Case Temperature  
24  
20  
16  
12  
8
20  
16  
12  
8
T
J
= 125oC  
25oC  
- 40oC  
4
4
0
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
70  
24  
20  
16  
12  
8
T
J
= - 40oC  
60  
50  
40  
30  
20  
10  
0
25oC  
125oC  
T
J
= 125oC  
T
J
= 25oC  
4
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
V SD - Volts  
I D - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
100000  
10000  
1000  
100  
10  
8
V
= 300V  
DS  
I
I
= 11A  
D
G
= 10mA  
C
iss  
6
4
C
oss  
10  
2
1
= 1 MHz  
f
C
rss  
0
0.1  
0
5
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFH22N60X2A  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
20  
18  
16  
14  
12  
10  
8
100  
10  
R
DS(  
Limit  
)
on  
25μs  
100μs  
1
6
1ms  
0.1  
0.01  
T
J
= 150oC  
= 25oC  
4
10ms  
T
C
2
Single Pulse  
0
0
100  
200  
300  
400  
500  
600  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_22N60X2A(X4-S602) 5-31-18  
IXFH22N60X2A  
TO-247 (IXFH) Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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