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IXGY2N120

型号:

IXGY2N120

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

129 K

Preliminary Data Sheet  
VCES  
IC90  
VCE(SAT)  
High Voltage IGBT  
IXGY 2N120  
1200 V 2.0 A  
3 V  
TO-252AA(IXGY)  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
Maximum Ratings  
1200  
V
VCGR  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1200  
V
G
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C (TAB)  
G = Gate  
E = Emitter  
C = Collector  
TAB = Collector  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
5
2
8
A
A
A
SSOA  
VGE = 15 V, TJ = 125°C, RG = 150Ω  
ICM = 6  
A
(RBSOA)  
Clamped inductive load  
@ 0.8 VCES  
Features  
PC  
TC = 25°C  
25  
W
International standard package  
Low VCE(sat)  
TJ  
TJM  
-55 ... +150  
150  
°C  
°C  
-Hifgohr lcouwrreonnt-shtaatnedlcinogndcuacptaiobnililtoysses  
TSTG  
-55 ... +150  
0.8  
°C  
g
Weight  
MOS Gate turn-on  
- drive simplicity  
Max. Lead Temperature for  
Soldering (1.6mm from case for 10s)  
300  
°C  
Applications  
Capacitor discharge  
Anode triggering of thyristors  
DC choppers  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 25µA, VGE = 0 V  
IC = 25µA, VCE = VGE  
1200  
V
V
Switched-mode and resonant-mode  
power supplies.  
2.5  
5.0  
VCE = 0.8 VCES  
VGE = 0 V  
TJ  
=
25°C  
10 µA  
200 µA  
TJ = 125°C  
IGES  
VCE = 0 V, VGE = ±20 V  
IC = IC90, VGE = 15 V  
IC = IC25, VGE = 15 V  
± 50 nA  
VCE(sat)  
2.5  
3.8  
3.0  
4.5  
V
V
IC = IC25, T = 125oC  
4.5  
V
© 2002 IXYS All rights reserved  
DS 98959 (10/02)  
IXGY 2N120  
TO-252 AA Outline (IXGY)  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C unless otherwise specified)  
gfs  
IC = IC90, VCE = 15 V,  
1.5  
2.5  
S
Pulse test, t < 300 µs, duty cycle < 2 %  
Cies  
Coes  
Cres  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
110  
12  
2
pF  
pF  
pF  
1Anode  
2 NC  
3Anode  
4 Cathode  
Qg  
Qge  
Qgc  
IC = Ic90, VGE = 15 V, VCE = 0.5 VCES  
9.0  
1.6  
3.2  
nC  
nC  
nC  
Dim. Millimeter  
Inches  
Min. Max. Min. Max.  
td(on)  
tri  
td(off)  
tfi  
Inductive load, TJ = 25°C  
IC = IC90, VGE = 15 V  
RG = 150 Ω  
VCLAMP = 0.8 VCES  
Note 1  
15  
25  
300  
360  
0.6  
ns  
ns  
ns  
ns  
mJ  
A
2.19 2.38 0.086 0.094  
A1 0.89 1.14 0.035 0.045  
A2  
b
0
0.13  
0
0.005  
0.64 0.89 0.025 0.035  
b1 0.76 1.14 0.030 0.045  
b2 5.21 5.46 0.205 0.215  
Eoff  
c
c1  
0.46 0.58 0.018 0.023  
0.46 0.58 0.018 0.023  
td(on)  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V  
RG = R(off) = 150 Ω  
VCLAMP = 0.8 VCES  
Note 1  
15  
30  
500  
500  
1.2  
ns  
ns  
µs  
ns  
D
D1  
5.97 6.22 0.235 0.245  
4.32 5.21 0.170 0.205  
t
tri  
E
6.35 6.73 0.250 0.265  
E1 4.32 5.21 0.170 0.205  
d(off)i  
tfi  
e
e1  
2.28 BSC  
4.57 BSC  
0.090BSC  
0.180BSC  
Eoff  
mJ  
H
L
9.40 10.42 0.370 0.410  
0.51 1.02 0.020 0.040  
L1  
L2  
L3  
0.64 1.02 0.025 0.040  
0.89 1.27 0.035 0.050  
2.54 2.92 0.100 0.115  
RthJC  
4.2 K/W  
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 VCES  
higher TJ or increased RG.  
,
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
IXGY 2N120  
Fig.1. SaturationVoltageCharacteristics@25oC  
Fig.2. ExtendedOutputCharacteristics  
15  
10  
5
5
TJ = 25oC  
V
GE = 15V  
13V  
TJ = 25OC  
9V  
4
V
GE = 15V  
7V  
13V  
11V  
11V  
3
2
1
0
9V  
7V  
5V  
5V  
0
0
5
10  
15  
0
2
4
6
8
10  
VCE - Volts  
VCE - Volts  
Fig.3. SaturationVoltageCharacteristics@125oC  
Fig.4. TemperatureDependenceofVCE(SAT)  
5
2.0  
TJ = 125OC  
VGE = 15V  
IC = 5A  
1.8  
4
V
GE = 15V  
9V  
7V  
13V  
1.6  
1.4  
11V  
3
2
1
0
1.2  
IC = 2A  
1.0  
IC = 1A  
0.8  
0.6  
5V  
0
2
4
6
8
10  
-25  
0
25 50 75 100 125 150  
VCE - Volts  
TJ - Degrees C  
Fig.5. AdmittanceCurves  
Fig.6. CapacitanceCurves  
5
Ciss  
100  
10  
1
4
3
2
1
0
Coss  
Crss  
TJ = 125oC  
T
J = 25oC  
TJ = -40oC  
3
4
5
6
7
8
9
0
5
10 15 20 25 30 35 40  
VGE - Volts  
VCE - Volts  
© 2002 IXYS All rights reserved  
IXGY 2N120  
Fig. 8. Dependence of EOFF on RG.  
Fig. 7. Dependence of EOFF on IC.  
4
3
2
1
0
4
3
2
1
0
TJ = 125°C  
RG = 10Ω  
VG = 15V  
TJ = 125°C  
VG = 15V  
E(OFF)  
IC = 5A  
IC = 4A  
E(OFF)  
E(OFF)  
E(OFF)  
IC = 2A  
0
200  
400  
600  
800  
1000  
1
2
3
4
5
6
RG - Ohms  
IC - Amperes  
Fig. 9. Gate Charge  
Fig.10. Turn-offSafeOperatingArea  
16  
10  
V
DS = 500V  
6
14  
12  
10  
8
ID = 1A  
IG = 10mA  
TJ = -55 to +125°C  
1
RG = 10Ω  
dV/dt < 5V/ns  
6
4
2
0
0.1  
0
1
2
3
4
5
6
7
8
9
10  
0
200  
400  
600  
800 1000 1200  
Qg - nanocoulombs  
VCE - Volts  
Fig.11. TransientThermalResistance  
10  
4
3
2
Single pulse  
1
1
10  
100  
1000  
Pulse Width - milliSeconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
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