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IXGT2N250

型号：

IXGT2N250

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

179 K

下载PDF手册
Advance Technical Information  
High Voltage IGBTs  
VCES = 2500V  
IC110 = 2A  
IXGH2N250  
IXGT2N250  
for Capacitor Discharge  
Applications  
VCE(sat) ≤ 3.1V  
TO-247 (IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
G
C (TAB)  
VCES  
VCGR  
TC = 25°C to 150°C  
2500  
2500  
V
V
C
E
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
TO-268 (IXGT)  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
5.5  
2.0  
13.5  
A
A
A
SSOA  
(RBSOA)  
PC  
V
GE = 15V, TVJ = 125°C, RG = 50Ω  
ICM = 6  
A
V
G
E
Clamped Inductive Load  
TC = 25°C  
VCE ≤ 2000  
C (TAB)  
32  
W
G = Gate  
E = Emitter  
C
= Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
z Optimized for Low Conduction and  
Switching Losses  
z International Standard Packages  
Weight  
TO-247  
TO-268  
6
4
g
g
Advantages  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
z High Power Density  
Min.  
Typ.  
Max.  
z Low Gate Drive Requirement  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
2500  
3.0  
V
V
5.5  
Applications  
ICES  
VCE = 0.8 • VCES, VGE = 0V  
10 μA  
100 μA  
TJ = 125°C  
z Switched-Mode and Resonant-Mode  
Power Supplies  
z Uninterruptible Power Supplies (UPS)  
z Capacitor Discharge Circuits  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = IC110, VGE = 15V, Note 1  
2.6  
3.1  
3.1  
V
V
TJ = 125°C  
DS100162(06/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH2N250  
IXGT2N250  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = IC110, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
0.7  
1.2  
S
Cies  
Coes  
Cres  
144  
8.7  
3.2  
pF  
pF  
pF  
∅ P  
1
2
3
Qg  
Qge  
Qgc  
10.5  
6.4  
nC  
nC  
nC  
IC = IC110, VGE = 15V, VCE = 1000V  
1.0  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
22  
74  
ns  
ns  
e
Resistive Switching times, TJ = 25°C  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
IC = IC110, VGE = 15V  
3 - Source  
70  
ns  
ns  
VCE = 1800V, RG = 50Ω  
Dim.  
Millimeter  
Inches  
Min. Max.  
100  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
26  
89  
ns  
ns  
Resistive Switching times, TJ = 125°C  
IC = IC110, VGE = 15V  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
74  
ns  
ns  
VCE = 1800V, RG = 50Ω  
204  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
RthJC  
RthCK  
3.9 °C/W  
°C/W  
20.80 21.46  
15.75 16.26  
(TO-247)  
0.21  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
TO-268 (IXGT) Outline  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXGH2N250  
IXGT2N250  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
28  
24  
20  
16  
12  
8
VGE = 25V  
20V  
VGE = 25V  
15V  
20V  
15V  
10V  
4
10V  
12  
5V  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0
-50  
3
2
4
6
8
10  
14  
16  
18  
20  
150  
12  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 25V  
VGE = 15V  
20V  
15V  
I C = 4A  
10V  
I C = 2A  
5V  
I C = 1A  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
8
7
6
5
4
3
2
1
0
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
TJ = 25ºC  
TJ = - 40ºC  
25ºC  
125ºC  
I C = 4A  
2A  
1A  
6
7
8
9
10  
11  
12  
13  
14  
15  
4
5
6
7
8
9
10  
11  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_2N250(2P)6-17-09  
IXGH2N250  
IXGT2N250  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
16  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
VCE = 1000V  
C = 2A  
I G = 1mA  
I
TJ = - 40ºC  
25ºC  
125ºC  
6
4
2
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
9
10  
11  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Capacitance  
Fig. 9. Reverse-Bias Safe Operating Area  
1,000  
100  
10  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
= 1 MHz  
f
C
ies  
C
C
oes  
TJ = 150ºC  
RG = 50Ω  
dV / dt < 10V / ns  
res  
1
250  
500  
750  
1000  
1250  
1500  
1750  
2000  
2250  
2500  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
10.00  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXGH2N250  
IXGT2N250  
Fig. 13. Resistive Turn-on Rise Time  
Fig. 12. Resistive Turn-on Rise Time  
vs. Junction Temperature  
vs. Collector Current  
200  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
RG = 50Ω  
GE = 15V  
VCE = 1800V  
RG = 50Ω  
V
VGE = 15V  
VCE = 1800V  
TJ = 125ºC  
I C = 4A  
TJ = 25ºC  
I C = 2A  
60  
60  
40  
40  
20  
20  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Switching Times  
vs. Gate Resistance  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
58  
350  
300  
250  
200  
150  
100  
50  
90  
85  
80  
75  
70  
65  
60  
55  
54  
50  
46  
42  
38  
34  
30  
26  
22  
18  
14  
t r  
t d(on  
tf  
t d(off)  
- - - -  
) - - - -  
TJ = 125ºC, VGE = 15V  
VCE = 1800V  
RG = 50Ω, VGE = 15V  
VCE = 1800V  
I C = 2A  
I C = 4A, 2A  
I C = 4A  
0
60  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
50  
75  
100  
125  
150  
175  
200  
225  
250  
275  
300  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Collector Current  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
220  
200  
180  
160  
140  
120  
100  
80  
10,000  
1,000  
100  
90  
80  
70  
60  
tf  
t d(off) - - - -  
tf  
t d(off) - - - -  
RG = 50Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 1800V  
VCE = 1800V  
I C = 2A  
TJ = 125ºC  
I C = 4A  
TJ = 25ºC  
60  
40  
10  
0
20  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
50  
75  
100  
125  
150  
175  
200  
225  
250  
275  
300  
IC - Amperes  
RG - Ohms  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_2N250(2P)6-17-09  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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