Advance Technical Information
PolarHVTM HiPerFET
Power MOSFET
IXFC 30N50P
VDSS = 500
ID25 = 17
RDS(on) ≤ 225 mΩ
V
A
Electrically Isolated Back Surface
N-ChannelEnhancementMode
Fast Recovery Diode
AvalancheRated
Symbol
TestConditions
Maximum Ratings
ISOPLUS220TM(IXFC)
E153432
VDSS
VDGR
TJ = 25°C to 150°C
500
500
V
TJ = 25°C to 150°C; RGS = 1 MΩ
V
VGSS
VGSM
Continuous
Transient
30
40
V
V
G
D
S
Isolated back surface*
ID25
IDM
TC = 25°C
17
46
A
A
TC = 25°C, pulse width limited by TJM
G = Gate
S = Source
D = Drain
IAR
TC = 25°C
30
A
EAR
EAS
TC = 25°C
TC = 25°C
35
mJ
J
Features
z Fast Recovery diode
1.5
z Unclamped Inductive Switching (UIS)
rated
z International standard packages
z Low package inductance
- easy to drive and to protect
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 4 Ω
,
10
V/ns
TC = 25°C
150
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Advantages
z
Easy to mount
Space savings
High power density
z
TL
1.6 mm (0.062 in.) from case for 10 s
Plastic body
300
250
°C
°C
z
VISOL
FC
50/60 Hz, RMS, t = 1, leads-to-tab
Mounting Force
2500
V~
11..65/2.5..15
N/lb
Weight
2
g
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250µA
VGS = 30 V, VDS = 0
500
V
V
2.5
5.0
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
225 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
DS99331(02/05)
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