请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGH28N60A3

型号：

IXGH28N60A3

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

260 K

下载PDF手册
Advance Technical Information  
GenX3TM 600V  
IGBT  
VCES = 600V  
IC110 = 28A  
VCE(sat)  1.4V  
IXGA28N60A3  
IXGP28N60A3  
IXGH28N60A3  
Ultra Low Vsat PT IGBT for up  
to 5kHz Switching  
TO-263 (IXGA)  
G
E
C (Tab)  
Symbol  
Test Conditions  
Maximum Ratings  
TO-220 (IXGP)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
C (Tab)  
E
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
75  
28  
170  
A
A
A
TO-247 AD (IXGH)  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 10  
ICM = 48  
A
(RBSOA)  
Clamped Inductive Load  
@VCE VCES  
PC  
TC = 25°C  
190  
W
G
C
E
C (Tab)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
E = Emitter  
C
= Collector  
Tab = Collector  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-247 & TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Optimized for Low Conduction Losses  
Square RBSOA  
International Standard Packages  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Advantages  
High Power Density  
Extremely Rugged  
Low Gate Drive Requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.0  
25 A  
250 A  
TJ = 125C  
TJ = 125C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
Inrush Current Portection Circuits  
VCE(sat)  
IC = 24A, VGE = 15V, Note 1  
1.4  
V
V
1.3  
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100725(5/16)  
IXGA28N60A3 IXGP28N60A3  
IXGH28N60A3  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-220 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 24A, VCE = 10V, Note 1  
17  
30  
S
Cies  
Coes  
Cres  
1790  
100  
26  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg(on)  
Qge  
Qgc  
66  
13  
24  
nC  
nC  
nC  
IC = 24A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
18  
26  
ns  
Pins: 1 - Gate  
3 - Emitter  
2 - Collector  
ns  
mJ  
ns  
Inductive load, TJ = 25°C  
IC = 24A, VGE = 15V  
0.7  
300  
260  
2.4  
VCE = 480V, RG = 10  
ns  
Note 2  
Eof  
mJ  
f
td(on)  
tri  
20  
26  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 24A, VGE = 15V  
Eon  
td(off)  
tfi  
1.4  
470  
400  
4.2  
mJ  
ns  
VCE = 480V, RG = 10  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
RthCS  
0.66 °C/W  
°C/W  
TO-247 Outline  
D
A
TO-220  
TO-247  
0.50  
0.21  
A
B
0P 0K M D B M  
E
A2  
°C/W  
Q
S
D2  
R
D1  
Notes:  
D
0P1  
4
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
R1  
1
2
3
IXYS OPTION  
C
L1  
E1  
L
TO-263 Outline  
A1  
b
b2  
c
b4  
1 - Gate  
2,4 - Collector  
3 - Emitter  
e
J
M C A M  
1 - Gate  
2,4 - Collector  
3 - Emitter  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGA28N60A3 IXGP28N60A3  
IXGH28N60A3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
300  
250  
200  
150  
100  
50  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
13V  
9V  
7V  
11V  
9V  
7V  
0
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0
2
4
6
8
10  
12  
14  
16  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
50  
40  
30  
20  
10  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
I
= 48A  
C
9V  
7V  
I
I
= 24A  
= 12A  
C
C
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
T
J
= 25ºC  
I
= 48A  
C
24A  
12A  
T
= 125ºC  
J
25ºC  
- 40ºC  
5
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
VGE - Volts  
VGE - Volts  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXGA28N60A3 IXGP28N60A3  
IXGH28N60A3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
V
= 300V  
CE  
I
I
= 24A  
C
G
T
J
= - 40ºC  
= 10mA  
25ºC  
125ºC  
6
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
10  
20  
30  
40  
50  
60  
70  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
10,000  
1,000  
100  
50  
40  
30  
20  
10  
0
f
= 1 MHz  
C
ies  
C
oes  
T
= 125ºC  
J
R
= 10  
G
dv / dt < 10V / ns  
C
res  
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGA28N60A3 IXGP28N60A3  
IXGH28N60A3  
Fig. 13. Inductive Switching  
Fig. 12. Inductive Switching  
Energy Loss vs. Junction Temperature  
Energy Loss vs. Gate Resistance  
8
7
6
5
4
3
2
1
0
3.2  
10  
9
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
E
R
E
E
E
off  
on  
off  
on  
2.8  
= 10ꢀ V  
  
= 15V  
GE  
G
T
J
= 125ºC , V = 15V  
GE  
I
I
= 40A  
= 20A  
C
C
V
= 480V  
CE  
8
V
= 480V  
CE  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
7
I
=40A  
C
6
5
I
I
= 20A  
= 10A  
4
C
C
3
2
I
= 10A  
C
1
10  
30  
50  
70  
90  
110  
130  
150  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 14. Inductive Switching  
Fig. 15. Inductive Turn-off  
Energy Loss vs. Collector Current  
Switching Times vs. Gate Resistance  
8
7
6
5
4
3
2
1
0
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
540  
520  
500  
480  
460  
440  
420  
400  
380  
360  
340  
1300  
1200  
1100  
1000  
900  
E
R
E
t f i  
td(off)  
off  
on  
T
J
= 125ºC, VGE = 15V  
= 10Ω  
V
  
= 15V  
GE  
G
VCE = 480V  
V
= 480V  
CE  
I
= 10A, 20A, 40A  
C
800  
700  
T
= 125ºC  
J
600  
500  
400  
T
J
= 25ºC  
I
= 10A  
C
300  
10  
15  
20  
25  
30  
35  
40  
10  
30  
50  
70  
90  
110  
130  
150  
IC - Amperes  
RG - Ohms  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
560  
520  
480  
440  
400  
360  
320  
280  
240  
200  
160  
620  
520  
480  
440  
400  
360  
320  
280  
240  
200  
560  
520  
480  
440  
400  
360  
320  
280  
240  
t f i  
td(off)  
t f i  
td(off)  
580  
540  
500  
460  
420  
380  
340  
300  
260  
220  
R
G
= 10Ω , V = 15V  
R
= 10ꢀ , V = 15V  
GE  
G
GE  
V
= 480V  
V
= 480V  
CE  
CE  
T
J
= 125ºC  
I
= 40A, 20A, 10A  
C
T
J
= 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
10  
15  
20  
25  
30  
35  
40  
TJ - Degrees Centigrade  
IC - Amperes  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXGA28N60A3 IXGP28N60A3  
IXGH28N60A3  
Fig. 18. Inductive Turn-on  
Fig. 19. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Switching Times vs. Junction Temperature  
130  
110  
90  
130  
110  
90  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
24  
t r i  
td(on)  
23  
T
J
= 125ºC, V = 15V  
GE  
I
= 40A  
C
22  
21  
20  
19  
18  
17  
16  
15  
V
= 480V  
CE  
t r i  
td(on)  
I
= 40A  
C
R
G
= 10 , V = 15V  
  
GE  
V
= 480V  
CE  
70  
70  
I
I
= 20A  
C
I
= 20A  
C
50  
50  
30  
30  
I
= 10A  
C
= 10A  
65  
C
10  
10  
10  
30  
50  
70  
90  
110  
130  
150  
25  
35  
45  
55  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Collector Current  
50  
45  
40  
35  
30  
25  
20  
15  
10  
24  
23  
22  
21  
20  
19  
18  
17  
16  
t r i  
td(on)  
R
G
= 10 , V = 15V  
  
GE  
V
= 480V  
CE  
T
J
= 125ºC, 25ºC  
25ºC < T < 125ºC  
J
10  
15  
20  
25  
30  
35  
40  
IC - Amperes  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXG_28N60A3 (45) 7-02-08-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.235342s