请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXFP12N65X2A

型号：

IXFP12N65X2A

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

240 K

下载PDF手册
Advance Technical Information  
X2-Class HiPERFET  
Power MOSFET  
VDSS = 650V  
ID25 = 12A  
IXFP12N65X2A  
RDS(on) 310m  
AEC Q101 Qualified  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-220  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
650  
650  
V
V
G
D
VDGR  
TJ = 25C to 150C, RGS = 1M  
S
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G = Gate  
S = Source  
D
= Drain  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
12  
24  
A
A
Tab = Drain  
IA  
TC = 25C  
TC = 25C  
6
A
EAS  
300  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
Features  
180  
International Standard Package  
Low RDS(ON) and QG  
Avalanche Rated  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Low Package Inductance  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque  
1.13 / 10  
3
Nm/lb.in  
g
High Power Density  
Weight  
Easy to Mount  
Space Savings  
Applications  
Switch-Mode and Resonant-Mode  
Symbol  
Test Conditions  
Characteristic Values  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
3.0  
5.0  
Robotics and Servo Controls  
100 nA  
IDSS  
10 A  
TJ = 125C  
500 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
310 m  
DS100913A(6/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFP12N65X2A  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
4.8  
8.0  
S
RGi  
4.0  
Ciss  
Coss  
Crss  
1134  
712  
1
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
42  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
132  
td(on)  
tr  
td(off)  
tf  
27  
26  
45  
12  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 20(External)  
Qg(on)  
Qgs  
18.5  
6.7  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
5.0  
RthJC  
RthCS  
0.69 C/W  
C/W  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
12  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
48  
1.4  
V
trr  
QRM  
IRM  
155  
1
13  
ns  
IF = 6A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFP12N65X2A  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
12  
10  
8
24  
20  
16  
12  
8
V
= 10V  
8V  
V
= 10V  
9V  
GS  
GS  
8V  
7V  
7V  
6
6V  
5V  
4
6V  
5V  
2
4
0
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
12  
22  
0
5
10  
15  
20  
25  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 6A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
12  
10  
8
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 12A  
D
6
4
I
= 6A  
D
5V  
4V  
2
0
2
4
6
8
10  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 6A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
T
J
= 125oC  
BV  
DSS  
V
GS(th)  
T
= 25oC  
J
2
4
6
8
10  
12  
14  
16  
18  
20  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFP12N65X2A  
Fig. 8. Input Admittance  
Fig. 7. Maximum Drain Current vs. Case Temperature  
10  
9
8
7
6
5
4
3
2
1
0
14  
12  
10  
8
T
J
= 125oC  
25oC  
- 40oC  
6
4
2
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
12  
10  
8
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40oC  
25oC  
6
T
J
= 125oC  
125oC  
T
J
= 25oC  
4
2
0
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
1
2
3
4
5
6
7
8
9
10  
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10000  
1000  
100  
10  
10  
8
V
= 325V  
DS  
I
I
= 6A  
D
G
= 10mA  
C
iss  
6
C
oss  
4
2
1
= 1 MHz  
f
C
rss  
0
0.1  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
1
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFP12N65X2A  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
100  
10  
9
8
7
6
5
4
3
2
1
0
R
Limit  
)
DS(  
on  
25μs  
100μs  
1
0.1  
0.01  
T
J
= 150oC  
= 25oC  
1ms  
T
C
10ms  
Single Pulse  
DC  
10  
100  
1,000  
0
100  
200  
300  
400  
500  
600  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_12N65X2A (X3-S602) 5-31-18  
IXFP12N65X2A  
TO-220 (IXFP) Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
厂商 型号 描述 页数 下载

ILSI

 		IXF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A20AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.208686s