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IXGR24N120C3D1

型号：

IXGR24N120C3D1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

162 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 1200V IGBT  
IXGR24N120C3D1  
VCES = 1200V  
IC25 = 48A  
VCE(sat) ≤ 4.2V  
tfi(typ) = 110ns  
High speed PT IGBTs for  
20-50kHz Switching  
ISOPLUS 247TM (IXGR)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
1200  
1200  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
IC25  
IC100  
ICM  
TC = 25°C  
TC = 100°C  
TC = 25°C, 1ms  
48  
24  
96  
A
A
A
TAB  
E
IA  
TC = 25°C  
TC = 25°C  
20  
250  
A
mJ  
A
G = Gate  
E = Emitter  
C = Collector  
TAB = Collector  
EAS  
SSOA  
V
GE= 15V, TJ = 125°C, RG = 5Ω  
ICM = 48  
(RBSOA)  
Clamped inductive load @VCE ≤ 1200V  
Features  
PC  
TC = 25°C  
200  
W
• DCB Isolated mounting tab  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
• Meets TO-247AD package outline  
• High current handling capability  
• Latest generation HDMOSTM process  
TJM  
Tstg  
-55 ... +150  
FC  
Mounting force  
20..120/4.5..27  
N/lb.  
• MOS Gate turn-on  
-drive simplicity  
TL  
Maximum lead temperature for soldering  
1.6mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
TSOLD  
• Avalanche Rated  
VISOL  
50/60 Hz RMS, t = 1min  
2500  
3000  
5
V
V
g
IISOL < 1mA,  
t = 20seconds  
Applications  
Weight  
• Switch-mode and resonant-mode  
power supplies  
• Uninterruptible power supplies (UPS)  
Symbol  
Test Conditions  
Characteristic Values  
• DC choppers  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
• AC motor speed control  
• DC servo and robot drives  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
1200  
2.5  
V
V
5.0  
ICES  
VCE = VCES  
VGE = 0V  
100 μA  
1.5 mA  
Advantages  
TJ = 125°C  
TJ = 125°C  
• Space savings  
• Easy assembly  
• High power density  
IGES  
VCE = 0V, VGE = ±20V  
±100  
4.2  
nA  
VCE(sat)  
IC = 20A, VGE = 15V, Note 2  
3.6  
3.1  
V
V
• Very fast switching speeds for high  
frequency applications  
DS99946(02/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXGR24N120C3D1  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS247 (IXGR) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 24A, VCE = 10V, Note 2  
VCE = 25V, VGE = 0V, f = 1MHz  
10  
17  
S
Cies  
Coes  
Cres  
1620  
179  
52  
pF  
pF  
pF  
Qg  
79  
12  
36  
nC  
nC  
nC  
Qge  
Qgc  
IC = 24A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
16  
26  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 20A, VGE = 15V  
Eon  
td(off)  
tfi  
1.37  
93  
VCE = 600V, RG = 5Ω  
Note 1  
110  
Eoff  
0.47  
0.85 mJ  
td(on)  
tri  
17  
37  
ns  
ns  
mJ  
Inductive load, TJ = 125°C  
Eon  
td(off)  
tfi  
2.90  
125  
305  
1.18  
IC = 20A, VGE = 15V  
ns  
VCE = 600V, RG = 5Ω  
Note 1  
ns  
Eoff  
2.00 mJ  
RthJC  
RthCK  
1.00 °C/W  
°C/W  
0.15  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
VF  
IF = 30A, VGE = 0V  
IF = 30A, VGE = 0V  
2.75  
1.80  
V
V
TJ = 125°C  
IRM  
trr  
IF = 50A, -diF/dt = 100A/μs, VR = 600V  
VGE = 0V, TJ = 100°C  
5.5  
220  
11  
A
ns  
RthJC  
1.5 °C/W  
Notes:  
1. Switching times may increase for VCE (Clamp) > 0.8 • VCES,  
higher TJ or increased RG.  
2. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGR24N120C3D1  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
180  
160  
140  
120  
100  
80  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGE = 15V  
VGE = 15V  
13V  
11V  
13V  
11V  
9V  
7V  
60  
9V  
7V  
40  
20  
5V  
0
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26  
VCE - Volts  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 48A  
9V  
7V  
I C = 24A  
I C = 12A  
5V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
8.0  
7.5  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
TJ = 25ºC  
TJ = - 40ºC  
25ºC  
125ºC  
I C = 48A  
24A  
12A  
0
5
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGR24N120C3D1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
16  
14  
12  
10  
8
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
I
I
C = 24A  
G = 10mA  
25ºC  
125ºC  
6
4
6
4
2
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
0
10  
20  
30  
40  
50  
60  
70  
80  
1400  
10  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 5  
Ω
dV / dt < 10V / ns  
C
res  
0
10  
200  
400  
600  
800  
1000  
1200  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
10.00  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_24N120C3D1(4N)02-19-08  
IXGR24N120C3D1  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
E
E
on - - - -  
off  
RG = 5  
VGE = 15V  
,
Ω
VCE = 600V  
I C = 20A  
E
E
on - - - -  
TJ = 125ºC , VGE = 15V  
VCE = 600V  
off  
TJ = 125ºC  
I C = 10A  
TJ = 25ºC  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
360  
340  
320  
300  
280  
260  
240  
220  
200  
400  
360  
320  
280  
240  
200  
160  
120  
80  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
4.2  
3.6  
3.0  
2.4  
1.8  
1.2  
0.6  
0.0  
E
E
on - - - -  
VGE = 15V  
,
off  
RG = 5  
tf  
td(off  
) - - - -  
Ω
TJ = 125ºC, VGE = 15V  
CE = 600V  
VCE = 600V  
V
I C = 20A  
I C = 20A  
I C = 10A  
I C = 10A  
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
380  
340  
300  
260  
220  
180  
140  
100  
130  
350  
300  
250  
200  
150  
100  
50  
140  
130  
120  
110  
100  
90  
125  
120  
115  
110  
105  
100  
95  
tf  
td(off) - - - -  
RG = 5 , VGE = 15V  
Ω
VCE = 600V  
TJ = 125ºC  
I C = 20A  
tf  
td(off  
) - - - -  
RG = 5 , VGE = 15V  
Ω
VCE = 600V  
I C = 10A  
TJ = 25ºC  
60  
20  
90  
85  
80  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXGR24N120C3D1  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
42  
38  
34  
30  
26  
22  
18  
14  
10  
18.0  
17.5  
17.0  
16.5  
16.0  
15.5  
15.0  
14.5  
14.0  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
tr  
td(on) - - - -  
tr  
td(on) - - - -  
TJ = 125ºC, VGE = 15V  
RG = 5 , VGE = 15V  
Ω
I C = 20A  
VCE = 600V  
VCE = 600V  
TJ = 125ºC  
I C = 10A  
TJ = 25ºC  
4
6
8
10  
12  
14  
16  
18  
20  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
40  
35  
30  
25  
20  
15  
10  
19  
18  
17  
16  
15  
14  
13  
tr  
td(on) - - - -  
RG = 5 , VGE = 15V  
Ω
VCE = 600V  
I C = 20A  
I C = 10A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_24N120C3D1(4N)02-26-08-A  
IXGR24N120C3D1  
70  
A
5
60  
A
TVJ= 100°C  
VR = 600V  
TVJ= 100°C  
VR = 600V  
μC  
60  
IF 50  
40  
50  
4
3
2
1
0
Qr  
IRM  
IF= 60A  
IF= 30A  
IF= 15A  
40  
30  
20  
10  
0
TVJ=150°C  
TVJ=100°C  
TVJ= 25°C  
IF= 60A  
IF= 30A  
IF= 15A  
30  
20  
10  
0
A/μs  
-diF/dt  
0
1
2
3
VF  
V
4
100  
1000  
0
200 400 600 1000  
A/μs  
-diF/dt  
Fig. 23. Peak reverse current IRM  
Fig. 22. Reverse recovery charge Qr  
Fig. 21. Forward current IF versus VF  
2.0  
220  
120  
1.2  
μs  
TVJ= 100°C  
VR = 600V  
TVJ= 100°C  
IF = 30A  
ns  
V
200  
VFR  
tfr  
1.5  
Kf  
trr  
80  
40  
0
0.8  
IF= 60A  
IF= 30A  
IF= 15A  
180  
160  
140  
120  
1.0  
VFR  
IRM  
tfr  
0.4  
Qr  
0.5  
0.0  
0.
A/μs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
C
A/μs  
diF/dt  
TVJ  
-diF/dt  
Fig. 26. Peak forward voltage VFR and  
Fig. 24. Dynamic Parameters Qr, IRM  
Fig. 25. Recovery time trr versus -diF/dt  
1
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
Time - Seconds  
0.1  
1
t
Fig. 27. Transient thermal resistance junction to case  
© 2008 IXYS CORPORATION, All rights reserved  
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