New Product
VTS40100CT, VF40100C, VB40100C & VI40100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.375 V at I = 5 A
F
F
FEATURES
TMBS®
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
TO-220AB
ITO-220AB
• Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
3
3
2
2
1
1
VTS40100CT
VF40100C
• Solder dip 260 °C, 40 seconds (for TO-220AB,
ITO-220AB & TO-262AA package)
PIN 1
PIN 1
PIN 2
CASE
PIN 2
PIN 3
PIN 3
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TO-263AB
TO-262AA
K
K
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, free-wheeling diodes, oring diode, dc-to-dc
converters and reverse battery protection.
2
3
1
2
1
VB40100C
VI40100C
MECHANICAL DATA
PIN 1
PIN 2
K
PIN 1
PIN 2
K
HEATSINK
PIN 3
Case: TO-220AB, ITO-220AB, TO-263AB & TO-262AA
Epoxy meets UL 94V-0 flammability rating
PRIMARY CHARACTERISTICS
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
IF(AV
VRRM
IFSM
)
2 x 20 A
100 V
250 A
Polarity: As marked
VF at IF = 20 A
Tj max.
0.61 V
150 °C
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL VTS40100CT VF40100C VB40100C VI40100C
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
V
Maximum average forward rectified current
(see Fig. 1)
per device
per diode
40
20
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
250
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 minute
VAC
1500
V
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
°C
Document Number: 88926
Revision: 02-Aug-07
www.vishay.com
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