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IXFT26N100XHV

型号：

IXFT26N100XHV

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

333 K

下载PDF手册
Advance Technical Information  
X-Class HiPerFETTM  
Power MOSFET  
VDSS = 1000V  
ID25 = 26A  
RDS(on) 320m  
IXFT26N100XHV  
IXFH26N100X  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-268HV  
(IXFT)  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25C to 150C  
1000  
1000  
V
V
D (Tab)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
TO-247  
(IXFH)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
26  
52  
A
A
G
D
IA  
TC = 25C  
TC = 25C  
8
2
A
J
S
D (Tab)  
= Drain  
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
G = Gate  
S = Source  
D
Tab = Drain  
860  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
High Voltage Package  
Low RDS(ON) and QG  
Avalanche Rated  
Low Package Inductance  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in  
Weight  
TO-268HV  
TO-247  
4
6
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
1000  
V
V
Applications  
3.5  
6.0  
Switch-Mode and Resonant-Mode  
100 nA  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
IDSS  
25 A  
3 mA  
TJ = 125C  
Robotics and Servo Controls  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
320 m  
DS100935A(9/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFT26N100XHV  
IXFH26N100X  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
11  
18  
S
RGi  
0.50  
Ciss  
Coss  
Crss  
3290  
620  
30  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
120  
480  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
29  
20  
62  
8
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 3(External)  
Qg(on)  
Qgs  
113  
23  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
55  
RthJC  
RthCS  
0.145 C/W  
C/W  
TO-247  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
26  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
104  
1.4  
V
trr  
QRM  
IRM  
220  
1.8  
16.3  
ns  
IF = 13A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFT26N100XHV  
IXFH26N100X  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
28  
24  
20  
16  
12  
8
60  
50  
40  
30  
20  
10  
0
V
= 10V  
9V  
GS  
V
= 10V  
9V  
GS  
8V  
7V  
6V  
8V  
7V  
6V  
4
0
0
0
0
1
2
3
4
5
6
7
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 13A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
28  
24  
20  
16  
12  
8
V
= 10V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 26A  
D
I
= 13A  
D
6V  
5V  
4
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 13A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
o
T = 125 C  
J
o
T = 25 C  
J
V
GS(th)  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFT26N100XHV  
IXFH26N100X  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
40  
35  
30  
25  
20  
15  
10  
5
28  
24  
20  
16  
12  
8
o
- 40 C  
V
= 20V  
DS  
o
25 C  
o
T
J
= 125 C  
4
0
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
40  
35  
30  
25  
20  
15  
10  
5
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
o
T
= - 40 C  
J
V
= 20V  
DS  
o
25 C  
o
o
T = 125 C  
J
125 C  
o
T = 25 C  
J
0
0
5
10  
15  
20  
25  
30  
35  
40  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
ID - Amperes  
VSD - Volts  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
100,000  
10,000  
1,000  
100  
10  
9
8
7
6
5
4
3
2
1
0
C
iss  
C
C
oss  
rss  
V
= 500V  
DS  
10  
I
I
= 13A  
D
G
= 10mA  
= 1 MHz  
f
1
0
20  
40  
60  
80  
100  
120  
1
10  
100  
1,000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFT26N100XHV  
IXFH26N100X  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Output Capacitance Stored Energy  
100  
10  
1
60  
50  
40  
30  
20  
10  
0
R
Limit  
)
DS(  
on  
100μs  
1ms  
10ms  
DC  
o
0.1  
T = 150 C  
J
o
T
= 25 C  
C
Single Pulse  
0.01  
0
100  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFT26N100XHV  
IXFH26N100X  
TO-268HV Outline  
PINS:  
1 - Gate  
2 - Source  
3 - Drain  
TO-247 Outline  
PINS:  
1 - Gate 2,4 - Source  
3 - Drain  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_26N100X(S7-DA01) 9-25-18  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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