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IXGX40N120BD1

型号：

IXGX40N120BD1

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

593 K

下载PDF手册
Advanced Technical Information  
IXGX 40N120BD1  
High Voltage IGBT  
with Diode  
VCES  
IC25  
= 1200 V  
= 75 A  
VCE(sat) = 3.3 V  
tfi(typ)  
= 250 ns  
Symbol  
TestConditions  
Maximum Ratings  
PLUS247(IXGX)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1200  
1200  
V
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
(TAB)  
G
C
E
IC25  
IC110  
IF110  
ICM  
TC = 25°C  
75  
40  
23  
A
A
A
A
G = Gate  
C = Collector  
TAB = Collector  
TC = 110°C  
TC = 110°C  
TC = 25°C, 1 ms  
E = Emitter  
Features  
200  
z
International standard packages  
IGBT and anti-parallel FRED for  
resonant power supplies  
- Induction heating  
SSOA  
V
= 15 V, TJ = 125°C, RG = 10 Ω  
ICM = 120  
A
CGlaE mped inductive load  
@0.8 VCES  
z
(RBSOA)  
PC  
TC = 25°C  
400  
W
- Rice cookers  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
z
MOS Gate turn-on  
- drive simplicity  
Fast Recovery Expitaxial Diode (FRED)  
- soft recovery with low IRM  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Advantages  
Weight  
5
g
z
Saves space (two devices in one  
package)  
z
Easy to mount with 1 screw  
(isolated mounting screw hole)  
Symbol  
TestConditions  
Characteristic Values  
z
Reduces assembly time and cost  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
2.5  
5.0  
V
VCE = V  
T=25°C  
50 µA  
VGE = 0CVES  
T=125°C  
250 µA  
IGES  
VCE = 0 V, VGE = 20 V  
100 nA  
VCE(sat)  
I
= 20A, VGE = 15 V  
= 40A, VGE = 15 V  
1.5  
2.0  
3.3  
V
V
ICC  
Note 2  
© 2004 IXYS All rights reserved  
DS99188B(11/04)  
IXGX 40N120BD1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
PLUS247 Outline  
IC = 40A; VCE = 10 V,  
Note 2.  
30  
37  
S
Cies  
Coes  
Cres  
2500  
220  
70  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
Qge  
Qgc  
135  
20  
50  
nC  
nC  
nC  
IC = 40A, VGE = 15 V, VCE = 0.5 VCES  
Terminals:  
1 - Gate  
3 - Emitter  
2 - Collector  
4 - Collector  
td(on)  
tri  
td(off)  
tfi  
40  
50  
380  
235  
6.8  
ns  
ns  
ns  
ns  
mJ  
Inductive load, TJ = 25°C  
IC = 40 A; VGE = 15 V  
VCE = 0.8 VCES; RG = Roff = 3 Ω  
Note 1.  
Eoff  
td(on)  
tri  
45  
60  
ns  
ns  
Inductive load, TJ = 125°C  
Eon  
td(off)  
tfi  
2.4  
mJ  
ns  
ns  
IC = 40A; VGE = 15 V  
VCE = 0.8 VCES; RG = Roff = 3 Ω  
490  
540  
13.5  
Note 1  
Eoff  
mJ  
RthJC  
RthCK  
0.35 K/W  
K/W  
0.15  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
I = 30 A, VGE = 0 V  
3.1  
1.8  
V
V
IFF = 30 A, VGE = 0 V, TJ = 125°C  
IRM  
trr  
IF = 50 A; -diF/dt = 100 A/µs; VR = 100 V  
VGE = 0 V; TJ = 125°C  
6.3  
200  
A
ns  
trr  
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V  
40  
ns  
RthJC  
0.9 K/W  
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ  
or increased RG.  
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
oneormoreofthefollowingU.S.patents:  
IXGX 40N120BD1  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25  
º
C
@ 25 C  
º
280  
240  
200  
160  
120  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
GE  
= 15V  
13V  
11V  
V
= 15V  
13V  
11V  
GE  
9V  
7V  
9V  
7V  
40  
5V  
0
0.5  
0.5  
5
1
1.5  
2
2.5  
3
3.5  
4
0
1
2
3
4
5
6
7
8
9
10  
VC E - Volts  
VC E - Volts  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
Fig. 3. Output Characteristics  
@ 125  
º
C
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
GE  
= 15V  
13V  
11V  
V
= 15V  
GE  
I
= 80A  
C
9V  
7V  
I
= 40A  
= 20A  
C
I
C
5V  
-50  
-25  
0
25  
50  
75  
100 125 150  
1
1.5  
2
2.5  
3
3.5  
4
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
7
6
5
4
3
2
1
160  
140  
120  
100  
80  
= 25ºC  
T
J
I
= 80A  
40A  
C
20A  
60  
T = 125ºC  
J
40  
25ºC  
-40ºC  
20  
0
4
5
6
7
8
9
10  
6
7
8
9
10 11 12 13 14 15  
VG E - Volts  
VG E - Volts  
© 2004 IXYS All rights reserved  
IXGX 40N120BD1  
Fig. 8. Dependence of Turn-off  
Fig. 7. Transconductance  
Energy Loss on RG  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
33  
30  
27  
24  
21  
18  
15  
12  
9
I
= 80A  
= 40A  
C
I
T = 125ºC  
J
V
GE  
= 15V  
T = -40ºC  
J
V
CE  
= 960V  
25ºC  
125ºC  
C
6
I
= 20A  
C
0
3
0
20  
5
20  
40  
60  
80 100 120 140 160 180  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
30  
27  
24  
21  
18  
15  
12  
9
30  
27  
24  
21  
18  
15  
12  
9
R
= 5Ω  
G
R
= 5Ω  
G
V
GE  
= 15V  
T = 125ºC  
J
V
= 15V  
GE  
= 960V  
V
CE  
= 960V  
I
= 80A  
= 40A  
V
CE  
C
I
C
T = 25ºC  
J
6
6
3
3
I
= 20A  
C
0
0
30  
40  
50  
60  
70  
80  
25 35 45 55 65 75 85 95 105 115 125  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
1300  
1200  
1100  
1000  
900  
650  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
td(off)  
tfi - - - - -  
td(off)  
tfi - - - - -  
T = 125ºC  
J
I = 20A  
C
T = 125ºC  
J
R
= 5Ω  
G
V
= 15V  
GE  
CE  
V
= 15V  
GE  
CE  
V
= 960V  
V
= 960V  
800  
I
= 80A  
C
I
= 40A  
C
700  
T = 25ºC  
J
600  
500  
I
= 20A  
45  
C
400  
10  
15  
20  
25 30  
R G - Ohms  
35  
40  
50  
20  
30  
40  
50  
60  
70  
80  
I C - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
oneormoreofthefollowingU.S.patents:  
IXGX 40N120BD1  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
650  
600  
550  
500  
450  
400  
350  
300  
250  
200  
16  
14  
12  
10  
8
td(off)  
V
I
= 600V  
CE  
= 40A  
I
= 20A  
40A  
80A  
C
tfi  
- - - - -  
C
R
= 5Ω  
G
I
= 10mA  
G
V
= 15V  
GE  
CE  
V
= 960V  
6
I
= 80A  
40A  
4
C
20A  
2
0
25 35 45 55 65 75 85 95 105 115 125  
0
20  
40  
60  
80  
100  
120  
140  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
Fig. 16. Reverse-Bias Safe  
Operating Area  
Fig. 15. Capacitance  
10000  
1000  
100  
140  
120  
100  
80  
f = 1 MHz  
C
ies  
C
oes  
60  
T = 125ºC  
J
40  
R
= 5Ω  
G
C
res  
20  
dV/dT < 10V/ns  
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
100  
300  
500  
700  
900  
1100  
1300  
VC E - Volts  
VC E - Volts  
Fig. 17. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
IXGX 40N120BD1  
70  
A
5
60  
A
T = 100°C  
VVRJ= 600V  
T = 100°C  
VVRJ= 600V  
µC  
60  
IF 50  
40  
50  
4
3
2
1
0
Qr  
IRM  
I = 60A  
I = 60A  
IF= 30A  
IFF=15A  
IF= 30A  
40  
30  
20  
10  
0
IFF= 15A  
TVJ=150°C  
TVJ=100°C  
30  
20  
TVJ= 25°C  
10  
0
A/µs  
0
1
2
3
V
4
100  
1000  
0
200 400 600 800 1000  
-diF/dt  
A/µs  
-diF/dt  
VF  
Fig. 1. Forward current IF versus VF  
2.0  
Fig. 2. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 3. Peak reverse current IRM  
versus -diF/dt  
220  
120  
1.2  
µs  
T = 100°C  
T = 100°C  
IFVJ = 30A  
VVRJ= 600V  
ns  
V
200  
VFR  
tfr  
1.5  
Kf  
tfr  
VFR  
trr  
80  
40  
0
0.8  
180  
I = 60A  
IFF=15A  
IF= 30A  
1.0  
IRM  
160  
0.4  
0.5  
140  
120  
Qr  
0.0  
0.
A/µs  
0
40  
80  
120  
160  
0
200 400 600 800 1000  
0
200 400 600 800 1000  
C
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 4. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 5. Recovery time trr versus -diF/dt  
Fig. 6. Peak forward voltage VFR and  
tfr versus diF/dt  
2
1
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
K/W  
1
2
3
0.465  
0.179  
0.256  
0.0052  
0.0003  
0.0397  
ZthJC  
0.1  
0.01  
0.001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 7  
Transient thermal resistance junction to case  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
oneormoreofthefollowingU.S.patents:  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

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