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IXGA150N33TC

型号：

IXGA150N33TC

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

194 K

下载PDF手册
Trench Gate High Speed  
IXGA150N33TC  
IXGQ150N33TC  
IXGQ150N33TCD1  
VCES  
ICP  
= 330V  
= 400A  
IGBT  
VCE(sat) ≤ 1.8V  
For PDP Applications  
150N33TC  
150N33TCD1  
TO-263 (IXGA)  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TC = 25°C to 150°C  
330  
V
V
G
E
VGEM  
Transient  
± 30  
(TAB)  
IC25  
ICP  
TC = 25°C, IGBT chip capability  
TJ ≤ 150°C, tp < 10 μs  
TJ ≤ 150°C, tp < 10 μs  
Lead current limit  
150  
400  
40  
A
A
A
A
TO-3P (IXGQ)  
IDP  
IC(RMS)  
75  
PC  
TC = 25°C  
300  
W
G
TJ  
-55 ... +150  
°C  
°C  
°C  
(TAB)  
C
E
TJM  
Tstg  
150  
-55 ... +150  
G = Gate  
E = Emitter  
C
= Collector  
TL  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
TAB = Collector  
TSOLD  
Md  
Mounting torque (TO-220)(TO-3P)  
1.13/10  
Nm/lb.in.  
Weight  
TO-263  
TO-3P  
2.5  
5.5  
g
g
Features  
•International standard packages  
•Low VCE(sat)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
330  
3.0  
Typ.  
Max.  
- for minimum on-state conduction  
losses  
BVCES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
V
•Fast switching  
VGE(th)  
ICES  
5.0  
1
V
VCE = 330 V  
VGE= 0 V  
μA  
Applications  
TJ = 125°C  
200 μA  
• PDP Screen Drivers  
IGES  
VCE= 0 V, VGE = ±20 V  
VGE = 15V, IC = 75A  
±100 nA  
VCE(sat)  
1.48  
1.49  
1.83  
1.97  
1.8  
V
V
V
V
TJ = 125°C  
TJ = 125°C  
IC = 150A  
© 2008 IXYS CORPORATION, All rights reserved  
DS99757A(09/08)  
IXGQ150N33TCD1 IXGA150N33TC  
IXGQ150N33TC  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
TO-3P (IXGQ) Outline  
gfs  
IC = 75A, VCE = 10V, Note 1  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
65  
103  
S
Cies  
Coes  
Cres  
4270  
308  
49  
pF  
pF  
pF  
Qg  
118  
25  
nC  
nC  
nC  
Qge  
Qgc  
IC = 75A, VGE = 15V, VCE = 0.5 • VCES  
25  
td(on)  
tri  
td(off)  
tfi  
17  
29  
42  
54  
ns  
ns  
ns  
ns  
Resistive load, TJ = 25°C  
IC = 75A, VGE = 15V  
Pins: 1 - Gate  
2 - Drain  
VCE = 240V, RG = Roff = 3.3Ω  
3 - Source 4, TAB - Drain  
td(on)  
tri  
td(off)  
tfi  
17  
25  
59  
73  
ns  
ns  
ns  
ns  
Resistive load, TJ = 125°C  
IC = 75A, VGE = 15V  
VCE = 240V, RG = Roff = 3.3Ω  
RthJC  
RthCH  
0.42 °C/W  
°C/W  
TO-3P  
0.25  
TO-263 (IXGA) Outline  
Reverse Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
Test Conditions  
IF = 20A, VGE = 0V  
Min.  
Typ.  
Max.  
VF  
2.0  
V
RthJC  
2.5 ºC/W  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
IXGQ150N33TCD1 IXGA150N33TC  
IXGQ150N33TC  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
150  
135  
120  
105  
90  
300  
VGE = 15V  
13V  
11V  
VGE = 15V  
11V  
270  
240  
210  
180  
150  
120  
90  
9V  
9V  
7V  
75  
60  
7V  
45  
60  
30  
30  
15  
0
0
0
1
2
3
4
5
6
7
8
9
10  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
150  
135  
120  
105  
90  
1.4  
1.3  
1.2  
1.1  
1
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 150A  
9V  
7V  
5V  
75  
I C = 75A  
60  
45  
0.9  
0.8  
0.7  
30  
I C = 37A  
15  
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2  
VCE - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
TJ = 25ºC  
I C = 150A  
75A  
37A  
TJ = 125ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
5
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGQ150N33TCD1 IXGA150N33TC  
IXGQ150N33TC  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
140  
120  
100  
80  
16  
TJ = - 40ºC  
VCE = 165V  
14  
I C = 75A  
25ºC  
I G = 10 mA  
12  
125ºC  
10  
8
60  
6
40  
4
20  
2
0
0
0
50  
1
20  
40  
60  
80  
100 120 140 160 180 200  
0
20  
40  
60  
80  
100  
120  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
160  
140  
120  
100  
80  
10,000  
1,000  
100  
f = 1 MHz  
C
ies  
C
oes  
60  
TJ = 150ºC  
40  
RG = 20Ω  
dV / d t < 10V / ns  
20  
C
res  
0
10  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
1000  
100  
10  
1.00  
0.10  
0.01  
VCE  
Limit  
(sat)  
1µs  
10µs  
100µs  
TJ = 150ºC  
1ms  
TC = 25ºC  
Single Pulse  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VCE - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Pulse Width - Seconds  
IXGQ150N33TCD1 IXGA150N33TC  
IXGQ150N33TC  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Collector Current  
34  
30  
29  
28  
27  
26  
25  
24  
RG = 3.3Ω  
RG = 3.3Ω  
33  
VGE = 15V  
32  
VGE = 15V  
VCE = 240V  
VCE = 240V  
31  
30  
29  
28  
27  
26  
25  
24  
TJ = 25ºC  
I C = 75A  
I C = 37A  
TJ = 125ºC  
35 40 45 50 55 60 65 70 75 80 85 90 95 100  
IC - Amperes  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
80  
30  
28  
26  
24  
22  
20  
18  
16  
120  
110  
100  
90  
64  
61  
58  
55  
52  
49  
46  
43  
40  
tr  
td(on)  
- - - -  
TJ = 125ºC, VGE = 15V  
tf  
td(off)  
- - - -  
RG = 3.3Ω, VGE = 15V  
70  
60  
50  
40  
30  
20  
10  
VCE = 240V  
VCE = 240V  
I C = 37A  
I C = 75A  
I C = 75A  
80  
I C = 37A  
70  
60  
50  
40  
2
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Collector Current  
120  
110  
100  
90  
72  
68  
64  
60  
56  
52  
48  
44  
40  
150  
140  
130  
120  
110  
100  
90  
200  
180  
160  
140  
120  
100  
80  
tf  
td(off)  
- - - -  
RG = 3.3Ω, VGE = 15V  
I C = 37A  
I C = 75A  
VCE = 240V  
TJ = 125ºC  
80  
70  
tf td(off)  
- - - -  
TJ = 125ºC, VGE = 15V  
60  
80  
60  
50  
TJ = 25ºC  
VCE = 240V  
70  
40  
40  
2
4
6
8
10  
12  
14  
16  
18  
20  
35 40 45 50 55 60 65 70 75 80 85 90 95 100  
RG - Ohms  
IC - Amperes  
IXYS REF: G_150N33TC(5G)9-04-08-B  
© 2008 IXYS CORPORATION, All rights reserved  
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