Technische Information / Technical Information
IGBT-Module
IGBT-Modules
DD 400 S 17 K6C B2
1700V Dual Dioden Modul mit softer EmCon Diode
1700V Dual Diode Module with soft EmCon Diode
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
VCES
1700
400
800
45
V
A
A
Dauergleichstrom
DC forward current
IF
Periodischer Spitzenstrom
repetitive peak forward current
tp = 1 ms
IFRM
Grenzlastintegral der Diode
I2t - value, Diode
I2t
kA2s
kV
VR = 0V, tp = 10ms, TVj = 125°C
RMS, f = 50 Hz, t = 1 min.
Isolations-Prüfspannung
insulation test voltage
VISOL
4
Charakteristische Werte / Characteristic values
min.
typ. max.
IF = 400A, Tvj = 25°C
Durchlaßspannung
VF
IR
2,1
2,1
0,01
5
2,5
2,5
1
V
forward voltage
IF = 400A, Tvj = 125°C
R = 1700V, Tvj = 25°C
V
V
mA
mA
Sperrstrom
reverse current
VR = 1700V, Tvj = 125°C
IF = 400A, - diF/dt = 3100A/µsec
VR = 900V, Tvj = 25°C
40
Rückstromspitze
peak reverse recovery current
IRM
300
370
A
A
VR = 900V, Tvj = 125°C
IF = 400A, - diF/dt =3100A/µsec
VR = 900V, Tvj = 25°C
Sperrverzögerungsladung
recovered charge
Qr
80
µAs
µAs
VR = 900V, Tvj = 125°C
IF = 400A, - diF/dt = 3100A/µsec
VR = 900V, Tvj = 25°C
145
Abschaltenergie pro Puls
reverse recovery energy
Erec
35
75
mWs
mWs
VR = 900V, Tvj = 125°C
Modulinduktivität
stray inductance module
LsAC
pro Diode / per Diode
pro Zweig / per arm
20
nH
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
RCC´+EE´
0,16
mΩ
prepared by: A. Wiesenthal
date of publication: 20.07.00
approved by: Chr. Lübke; 11.08.2000
revision: 2 (Series)
1(5)
DD400S17K6CB2
