General Purpose Transistor
Electrical Characteristics (Ta=25°C, unless otherwise specified)
Symbol
Parameter
Conditions
Min.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=100μA, IE=0
V(BR)CBO
V(BR)CEO*
V(BR)EBO
400
400
6
V
V
IC=1mA, IB=0
IE=100μA, IC=0
V
VCB=400V, IE=0
μA
μA
ICBO
IEBO
0.1
0.1
VEB=4V, IC=0
Emitter cut-off current
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=1mA, IB=0.1mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
VCE=10V, IC=10mA, f=100MHZ
VCB=20V, IE=0, f=1MHZ
VEB=0.5V, IC=0, f=1MHZ
hFE(1)*
40
50
45
40
hFE(2)*
200
DC current gain
hFE(3)*
hFE(4)*
VCE(sat)1*
VCE(sat)2*
VCE(sat)3*
VBE(sat)*
0.4
0.5
V
V
Collector-emitter saturation voltage
0.75
0.75
V
Base-emitter saturation voltage
Transition frequency
V
fT
20
MHz
pF
pF
Collector capacitance
Emitter capacitance
CC
Ce
7
130
*Pulse test: pulse width ≤300µs, duty cycle≤2.0%
RATING AND CHARACTERISTIC CURVES (PZTA44-G)
Fig.1 - fT — IC
200
100
Common Emitter
VCE = 10V
Ta=25°C
10
2
10
50
Collector current, Ic (mA)
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
Page 2
QW-BTR54
Comchip Technology CO., LTD.
