NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 1 APRIL 94
ZTX857
FEATURES
*
*
*
*
*
300 Volt VCEO
3 Amps continuous current
Up to 5 Amps peak current
Very low saturation voltage
Ptot= 1.2 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
330
Collector-Emitter Voltage
Emitter-Base Voltage
300
V
6
V
Peak Pulse Current
5
A
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
3
1.58
A
Ptotp
Ptot
W
W
°C
1.2
Tj:Tstg
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
ICBO
330
330
300
6
475
475
350
8
V
V
V
V
IC=100µA
Collector-Emitter Breakdown
Voltag
IC=1µA, RB ≤1KΩ
IC=10mA*
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
IE=100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
50
1
nA
µA
VCB=300V
VCB=300V, Tamb=100°C
ICER
R ≤1KΩ
50
1
nA
µA
VCB=300V
VCB=300V, Tamb=100°C
IEBO
10
nA
VEB=6V
Collector-Emitter Saturation
Voltage
VCE(sat)
50
80
140
170
100
140
200
250
mV
mV
mV
mV
IC=0.5A, IB=50mA*
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=3A, IB=600mA*
Base-Emitter
Saturation Voltage
VBE(sat)
870
1000 mV
IC=2A, IB=200mA*
3-303
