TM
Central
CZT5401
CZT5401G
Semiconductor Corp.
SURFACE MOUNT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5401
and CZT5401G are PNP silicon transistors
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high voltage amplifier applications.
The CZT5401G is Halogen Free by design.
•
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
A
Collector-Base Voltage
V
V
V
160
150
5.0
600
2.0
V
V
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
V
mA
W
°C
°C/W
I
P
C
D
T , T
stg
-65 to +150
62.5
J
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
50
UNITS
nA
μA
nA
V
I
I
I
V
V
V
=120V
CBO
CBO
EBO
CB
CB
EB
=120V, T =150°C
50
A
=3.0V
50
BV
BV
BV
I =100μA
160
150
5.0
CBO
CEO
C
I =1.0mA
V
C
I =10μA
V
EBO
E
V
V
V
V
I =10mA, I =1.0mA
0.2
0.5
1.0
1.0
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
I =50mA, I =5.0mA
V
C
B
I =10mA, I =1.0mA
V
C
B
I =50mA, I =5.0mA
V
C
B
h
h
h
V
=5.0V, I =1.0mA
50
60
CE
CE
CE
CE
CB
CE
CE
C
V
V
V
V
V
V
=5.0V, I =10mA
240
FE
C
=5.0V, I =50mA
50
FE
C
f
=10V, I =10mA, f=100MHz
100
300
6.0
MHz
pF
T
C
C
=10V, I =0, f=1.0MHz
E
ob
fe
h
=10V, I =1.0mA, f=1.0kHz
40
200
C
NF
=5.0V, I =200μA, R =10Ω
C S
f=10Hz to 15.7kHz
8.0
dB
R4 (13-June 2008)
