NPN SILICON PLANAR
ZTX649
MEDIUM POWER TRANSISTOR
ISSUE 2 APRIL 94
FEATURES
*
*
*
*
25 Volt VCEO
2 Amp continuous current
Low saturation voltage
Ptot=1 Watt
APPLICATIONS
C
B
E
*
*
Motor driver
E-Line
DC-DC converters
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
35
25
5
V
V
Peak Pulse Current
6
A
Continuous Collector Current
IC
2
A
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
V(BR)CBO 35
TYP.
MAX. UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 25
V
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
ICBO
5
IE=100µA
Collector Cut-Off
Current
0.1
10
VCB=30V
VCB=30V,T
µA
µA
=100°C
Emitter Cut-Off Current IEBO
0.1
VEB=4V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
VBE(on)
0.12
0.23
0.3
0.5
V
V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
Base-Emitter
Saturation Voltage
0.9
1.25
V
IC=1A, IB=100mA*
Base-Emitter
Turn-On Voltage
0.8
1
V
IC=1A, VCE=2V*
Static Forward Current hFE
Transfer Ratio
70
100
75
200
200
150
50
IC=50mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
300
15
Transition Frequency
fT
150
240
MHz
IC=100mA, VCE=5V
f=100MHz
3-216
