找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGT40N60C2

型号:

IXGT40N60C2

品牌:

IXYS[ IXYS CORPORATION ]

页数:

5 页

PDF大小:

148 K

HiPerFASTTM IGBT  
C2-Class High Speed IGBTs  
VCES  
IC25  
= 600 V  
= 75 A  
IXGH 40N60C2  
IXGT 40N60C2  
VCE(sat) = 2.7 V  
tfityp  
= 32 ns  
TO-268 (IXGT)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
G
TJ = 25°C to 150°C; RGE = 1 MΩ  
E
C (TAB)  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
TO-247 (IXGH)  
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
75  
40  
A
A
A
TC = 25°C, 1 ms  
200  
TAB)  
G
C
SSOA  
(RBSOA)  
PC  
VGE= 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ 600 V  
TC = 25°C  
ICM = 80  
A
E
300  
W
G = Gate,  
C = Collector,  
E = Emitter,  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body  
300  
200  
°C  
°C  
z
Very high frequency IGBT  
Square RBSOA  
High current handling capability  
MOS Gate turn-on  
z
z
z
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
- drive simplicity  
Weight  
TO-247  
TO-268  
6
4
g
g
Applications  
z
PFC circuits  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
min. typ. max.  
z
power supplies  
AC motor speed control  
DC servo and robot drives  
DC choppers  
z
z
VGE(th)  
ICES  
IC = 250 μA, VCE = VGE  
3.0  
5.0  
V
z
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 150°C  
50  
1
μA  
mA  
Advantages  
IGES  
VCE = 0 V, VGE = 20 V  
IC = 30 A, VGE = 15 V  
100  
2.7  
nA  
z
High power density  
Very fast switching speeds for high  
VCE(sat)  
TJ = 25°C  
TJ = 150°C  
2.2  
2.0  
V
V
z
frequency applications  
© 2005 IXYS All rights reserved  
DS99042C(10/05)  
IXGH 40N60C2  
IXGT 40N60C2  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = 30 A; VCE = 10 V,  
20  
36  
S
Pulse test, t 300 μs, duty cycle 2 %  
P  
Cies  
Coes  
Cres  
2500  
180  
54  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = 30 A, VGE = 15 V, VCE = 300 V  
Inductive load, TJ = 25°C  
Qg  
95  
14  
36  
nC  
nC  
nC  
e
Qge  
Qgc  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
td(off)  
tfi  
18  
20  
90  
32  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
IC = 30 A, VGE = 15 V  
VCE = 400 V, RG = Roff = 3 Ω  
140 ns  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Eoff  
0.20 0.37 mJ  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
td(on)  
tri  
18  
20  
ns  
ns  
.780 .800  
.177  
Inductive load, TJ = 125°C  
IC = 30 A, VGE = 15 V  
P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
Eon  
td(off)  
tfi  
0.3  
mJ  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
130  
80  
ns  
VCE = 400 V, RG = Roff = 3 Ω  
240 ns  
mJ  
Eoff  
0.50  
TO-268 Outline  
RthJC  
RthCK  
0.42 K/W  
K/W  
(TO-247)  
0.25  
Min. Recommended Footprint  
(Dimensions in inches and mm)  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETsandIGBTsarecoveredby  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
IXGH 40N60C2  
IXGT 40N60C2  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
60  
50  
40  
30  
20  
10  
210  
18 0  
15 0  
12 0  
90  
60  
30  
0
VG E = 15V  
VGE = 15V  
13V  
11V  
9V  
13V  
11V  
9V  
7V  
7V  
5V  
5V  
0
0.5  
0.5  
5
1
1.5  
2
2.5  
3
3.5  
0
1
2
3
4
VC E - Volts  
5
6
7
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Temperature Dependence of VCE(sat)  
60  
50  
40  
30  
20  
10  
1. 3  
1. 2  
1. 1  
1
VGE = 15V  
13V  
11V  
9V  
I C= 60A  
VGE = 15V  
7V  
0.9  
0.8  
0.7  
0.6  
I C= 30A  
I C= 15A  
5V  
0
1
1.5  
2
2.5  
3
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
4
3.5  
3
210  
18 0  
15 0  
12 0  
90  
60  
30  
0
TJ = 25 C  
º
2.5  
2
I C = 60A  
TJ= 125  
25  
-40  
º
C
30A  
1 5 A  
º
C
1. 5  
º
C
1
6
7
8
9
10  
11 12 13  
14 15  
4
5
6
7
8
9
10  
VG E - Volts  
VG E - Volts  
© 2005 IXYS All rights reserved  
IXGH 40N60C2  
IXGT 40N60C2  
Fig. 7. Transconductance  
Fig. 8. Dependence of Eoff on RG  
70  
60  
50  
40  
30  
20  
10  
1.8  
1.6  
1.4  
1.2  
TJ = -40  
25  
125  
º
C
C
I C = 60A  
I C=45A  
º
TJ = 125 C  
GE = 15V  
VCE =400V  
º
V
º
C
1
0.8  
0.6  
0.4  
0.2  
0
I C = 30A  
I C= 15A  
0
0
10  
0
30  
60  
90  
120  
150  
180  
2
4
6
8
10  
R G - Ohms  
12  
14  
16  
I C - Amperes  
Fig. 10. Dependence of Eoff on Temperature  
Fig. 9. Dependence of Eoff on IC  
1. 6  
1. 4  
1. 2  
1. 6  
1. 4  
1. 2  
1
RG = 3 Ohms  
RG = 10 Ohms  
RG = 3 Ohms  
RG= 10 Ohms  
- - - - -  
- - - - -  
I C = 60A  
VGE = 15V  
CE = 400V  
VG E = 15V  
C E = 400V  
V
V
1
I C = 45A  
0.8  
0.6  
0.4  
0.2  
0
0.8  
0.6  
0.4  
0.2  
0
º
TJ = 125 C  
I C = 30A  
I C = 15A  
º
TJ = 25 C  
25  
50  
75  
100  
125  
20  
30 40  
I C - Amperes  
50  
60  
TJ - Degrees Centigrade  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
15  
12  
9
10 0 0 0  
10 0 0  
10 0  
f = 1M Hz  
VCE = 300V  
I C = 30A  
I G = 10mA  
C
ies  
C
oes  
res  
6
3
C
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
20  
40  
60  
80  
100  
VC E - Volts  
Q G - nanoCoulombs  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGH 40N60C2  
IXGT 40N60C2  
F ig. 13. Maximum Tran sien t Th ermal Resistance  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2005 IXYS All rights reserved  
厂商 型号 描述 页数 下载

IXYS

IXGA10N60 低VCE ( SAT )的IGBT ,高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

IXGA10N60A 低VCE ( SAT )的IGBT ,高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 20A I(C ) | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 20A I(C ) | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.229835s