IXFA130N15X3 IXFP130N15X3
IXFH130N15X3
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 10V, ID = 60A, Note 1
Gate Input Resistance
50
82
S
RGi
1.8
Ciss
Coss
Crss
5230
920
14
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
Effective Output Capacitance
Co(er)
Co(tr)
585
pF
pF
Energy related
Time related
VGS = 0V
DS = 0.8 • VDSS
1350
V
td(on)
tr
td(off)
tf
21
25
62
12
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
V
RG = 5 (External)
Qg(on)
Qgs
80
27
25
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.32 C/W
TO-220
TO-247
0.50
0.21
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
130
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
520
1.4
V
trr
QRM
IRM
80
230
5.7
ns
IF = 65A, -di/dt = 100A/μs
nC
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537