JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-89 Plastic-Encapsulate Transistors
SOT-89
PXT8550
TRANSISTOR (PNP)
1. BASE
FEATURES
Compliment to PXT8050
1
2. COLLECTOR
2
MARKING: Y2
3. EMITTER
3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-40
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-25
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-1.5
0.5
A
PC
W
℃
℃
TJ
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
-40
-25
-5
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= -100μA, IE=0
IC= -0.1mA, IB=0
IE= -100μA, IC=0
VCB= -40 V,IE=0
V
V
-0.1
-0.1
-0.1
400
μA
μA
μA
Collector cut-off current
ICEO
VCE= -20V, IB=0
Emitter cut-off current
IEBO
VEB= -5V, IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE(on)
VBEF
VCE= -1V, IC= -100mA
VCE= -1V, IC= -800mA
IC=-800mA, IB= -80mA
IC=-800mA, IB= -80mA
Ic=-1V,VCE=-10mA
IB=-1A
85
40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
-0.5
-1.2
-1
V
V
V
Base-emitter positive favor voltage
Transition frequency
-1.55
V
V
CE= -10V, IC= -50mA
fT
100
MHz
pF
output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
20
CLASSIFICATION OF hFE(1)
Rank
B
C
D
D3
Range
85-160
120-200
160-300
300-400
