IXGV 32N170
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PLUS220SMD(HV)Outline
gfs
IC = IC25; V = 10 V,
25
33
S
Pulse test, t C≤E 300 µs, duty cycle ≤ 2 %
IC(ON)
VGE = 10V, VCE = 10V
130
A
Cies
Coes
Cres
3500
165
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge
Qgc
155
30
51
nC
nC
nC
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
45
38
270
250
11
ns
ns
500 ns
500 ns
20 mJ
IC = IC90, VGE = 15 V
VCE = 0.6 VCES, RG = Roff = 2.7 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
td(on)
tri
Eon
td(off)
tfi
48
42
6.0
360
560
ns
ns
mJ
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.6 VCES, RG = Roff = 2.7 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
14
mJ
RthJC
0.35 K/W
Please see IXGH32N170 data sheet for characteristic curves.
Minimum Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
4,850,072
