SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 JANUARY 1996
ZVP3306F
FEATURES
*
*
60 Volt VDS
D
S
RDS(on)=14Ω
PARTMARKING DETAIL ML
G
COMPLEMENTARY TYPE ZVN3306F
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDS
VALUE
-60
UNIT
V
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
ID
-90
mA
A
IDM
-1.6
Gate Source Voltage
VGS
V
± 20
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
330
mW
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
-60
V
ID=-1mA, VGS=0V
ID=-1mA, VDS= VGS
VGS=± 20V, VDS=0V
Gate-Source Threshold
Voltage
VGS(th)
-1.5 -3.5
20
V
Gate-Body Leakage
IGSS
IDSS
nA
Zero Gate Voltage Drain
Current
-0.5
-50
VDS=-60 V, VGS=0V
VDS=-48 V, VGS=0V, T=125°C(2)
µA
µA
On-State Drain Current(1)
ID(on)
-400
14
mA
VDS=-18 V, VGS=-10V
Static Drain-Source On-State RDS(on)
Resistance (1)
VGS=-10V, ID=-200mA
Ω
Forward Transconductance
(1)(2)
gfs
60
mS
VDS=-18V, ID=-200mA
Input Capacitance (2)
Ciss
50
25
pF
pF
Common Source Output
Capacitance (2)
Coss
VDS=-18V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crss
8
8
8
8
8
pF
ns
ns
ns
ns
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
td(on)
tr
td(off)
tf
VDD≈-18V, ID=-200mA
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 -434
