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IXFN52N100X

型号：

IXFN52N100X

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

193 K

下载PDF手册
Preliminary Technical Information  
X-Class HiPerFETTM  
Power MOSFET  
VDSS = 1000V  
ID25 = 44A  
IXFN52N100X  
RDS(on) 125m  
D
N-Channel Enhancement Mode  
Avalanche Rated  
G
S
S
miniBLOC, SOT-227  
E153432  
S
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
1000  
1000  
V
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
S
D
D = Drain  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
44  
100  
A
A
G = Gate  
S = Source  
IA  
EAS  
TC = 25C  
TC = 25C  
10  
3
A
J
PD  
TC = 25C  
830  
15  
W
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Features  
International Standard Package  
miniBLOC, with Aluminium Nitride  
Isolation  
Isolation Voltage 2500 V~  
Low QG  
VISOL  
50/60 Hz, RMS  
IISOL 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/lb.in  
Avalanche Rated  
Low Package Inductance  
Weight  
30  
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
1000  
V
V
Switch-Mode and Resonant-Mode  
3.5  
6.0  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
100 nA  
IDSS  
50 A  
5 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 26A, Note 1  
125 m  
© 2018 IXYS CORPORATION, All Rights Reserved  
DS100911B(10/18)  
IXFN52N100X  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 20V, ID = 26A, Note 1  
Gate Input Resistance  
23  
37  
S
RGi  
0.5  
Ciss  
Coss  
Crss  
6725  
1620  
123  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
220  
pF  
pF  
VGS = 0V  
Energy related  
Time related  
1070  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
34  
13  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 26A  
(M4 screws (4x) supplied)  
V
107  
9
RG = 1(External)  
Qg(on)  
Qgs  
245  
53  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 26A  
Qgd  
125  
RthJC  
RthCS  
0.15C/W  
0.10C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
52  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS , VGS = 0V, Note 1  
208  
1.4  
trr  
260  
2.7  
ns  
μC  
A
IF = 26A, -di/dt = 100A/s  
QRM  
IRM  
VR = 100V, VGS = 0V  
20.8  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN52N100X  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
140  
120  
100  
80  
V
= 10V  
GS  
V
= 10V  
9V  
50  
40  
30  
20  
10  
0
GS  
8V  
7V  
8V  
7V  
60  
40  
6V  
5V  
20  
6V  
5V  
0
0
1
2
3
4
5
6
7
8
9
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 26A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
7V  
6V  
I
= 52A  
D
I
= 26A  
D
5V  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 26A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
T
J
= 125oC  
BV  
DSS  
T
J
= 25oC  
V
GS(th)  
0
13  
26  
39  
52  
65  
78  
91  
104  
117  
130  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
ID - Amperes  
TJ - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFN52N100X  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
50  
40  
30  
20  
10  
0
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 20V  
DS  
T
J
= 125oC  
25oC  
- 40oC  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.5  
0.2  
1
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
60  
50  
40  
30  
20  
10  
0
200  
160  
120  
80  
T
= - 40oC  
J
V
= 20V  
DS  
25oC  
125oC  
T
= 125oC  
J
T
= 25oC  
J
40  
0
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
VSD - Volts  
I D - Amperes  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
10  
8
100,000  
10,000  
1,000  
100  
V
= 500V  
DS  
C
iss  
I
I
= 26A  
D
G
= 10mA  
6
C
oss  
4
10  
2
C
rss  
= 1 MHz  
f
1
0
10  
100  
1000  
0
50  
100  
150  
200  
250  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFN52N100X  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
100  
10  
1
120  
100  
80  
R
DS(  
on  
Limit  
)
25μs  
100μs  
60  
1ms  
40  
T = 150oC  
J
T
C
= 25oC  
20  
Single Pulse  
10ms  
DC  
100ms  
0
0.1  
0
100  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS_F_52N100X (U8-DA01) 10-02-18-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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