VUB 145-16NO1
IGBT
Ratings
Symbol
VCES
Definitions
Conditions
min.
typ. max. Unit
collector emitter voltage
TVJ = 25°C to 150°C
1200
V
max. DC gate voltage
max. transient collector gate voltage
VGES
VGEM
continuous
transient
-20
-30
+20
+30
V
V
collector current
IC25
IC80
DC
DC
TC = 25°C
TC = 80°C
141
100
A
A
total power dissipation
Ptot
TC = 25°C
TVJ = 25°C
TVJ = 25°C
570
3.7
W
V
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
VCE(sat)
VGE(th)
ICES
IC = 150 A; VGE = 15 V
IC = 3 mA
4.5
6.45
V
VCE = VCES; VGE = 0 V
VCE = 0.8·VCES; VGE = 0 V
TVJ = 25°C
TVJ = 125°C
0.1
0.5
mA
mA
input capacitance
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
5.7
nF
turn-on delay time
turn-off delay time
turn-on energy per pulse
turn-off energy per pulse
td(on)
td(off)
Eon
80
680
9
ns
ns
mJ
mJ
inductive load
VCE = 720 V; IC = 75 A
VGE = ±15 V; RG = 15 W; L = 100 µH
TVJ = 125°C
Eoff
7.5
reverse bias safe operating area
short circuit safe operating area
reverse bias safe operating area
ICM
VCEK
RBSOA; VGE = ±15 V; RG = 15 W; L = 100 µH
150
< VCES-LS·dI /dt
A
V
clamped inductive load
;
TVJ = 125°C
tSC
(SCSOA)
VCE = 720 V; VGE = ±15 V;
TVJ = 125°C
10
µs
RG = 15 W; non-repetitive
RBSOA
VCE = 1200 V; VGE = ±15 V;
TVJ = 125°C
150
A
RG = 15 W; L = 100 µH; clamped inductive load
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
0.22 K/W
K/W
0.22
Fast Recovery Diode
Ratings
Symbol
VRRM
IFAV
Definitions
Conditions
min.
typ. max. Unit
max. repetitive reverse voltage
average forward current
rms forward current
TVJ = 150°C
1200
27
V
A
rect.; d = 0.5
rect.; d = 0.5
t = 10 ms
TC = 80°C
TC = 80°C
TVJ = 45°C
TC = 25°C
TVJ = 150°C
IFRMS
IFSM
38
A
max. surge forward current
total power dissipation
200
130
A
Ptot
W
threshold voltage
slope resistance
VF0
rF
1.3
16
V
mW
for power loss calculation only
IF = 30 A
forward voltage
reverse current
VF
IR
TVJ = 25°C
2.76
0.25
V
VR = VRRM
TVJ = 25°C
TVJ = 125°C
mA
mA
1
5.5
40
reverse recovery current
IRM
IF = 50 A; VR = 100 V; diF /dt = -100 A/µs
IF = 1 A; VR = 30 V; diF /dt = -200 A/µs
11
A
reverse recovery time
trr
ns
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
0.9 K/W
K/W
0.1
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
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20101007a
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