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IXFH20N50P3

型号：

IXFH20N50P3

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

350 K

下载PDF手册
Polar3TM HiperFETTM  
Power MOSFET  
VDSS = 500V  
ID25 = 20A  
RDS(on) 300m  
IXFA20N50P3  
IXFP20N50P3  
IXFQ20N50P3  
IXFH20N50P3  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-263 (IXFA)  
TO-3P (IXFQ)  
TO-220 (IXFP)  
G
S
G
D
G
D
S
D (Tab)  
S
D (Tab)  
D (Tab)  
Symbol  
VDSS  
Test Conditions  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
Maximum Ratings  
TO-247 (IXFH)  
500  
500  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
20  
40  
A
A
S
D (Tab)  
D = Drain  
G = Gate  
S = Source  
IA  
TC = 25C  
TC = 25C  
10  
A
Tab = Drain  
EAS  
300  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
35  
V/ns  
W
380  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
Features  
-55 ... +150  
Fast Intrinsic Rectifier  
Avalanche Rated  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Low RDS(ON) and QG  
FC  
Md  
Mounting Force (TO-263)  
10..65 / 2.2..14.6  
N/lb  
Nm/lb.in  
Low Package Inductance  
Mounting Torque (TO-220, TO-3P & TO-247)  
1.13 / 10  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
Advantages  
TO-247  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1.5mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
5.0  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
          100 nA  
IDSS  
25 A  
Laser Drivers  
AC and DC Motor Drives  
Robotics and Servo Controls  
TJ = 125C  
1.25 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
300 m  
DS100414B(6/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFA20N50P3 IXFA20N50P3  
IXFQ20N50P3 IXFH20N50P3  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
11  
18  
S
Ciss  
Coss  
Crss  
1800  
230  
8.3  
pF  
pF  
pF  
RGi  
2.3  
td(on)  
tr  
td(off)  
tf  
10  
5
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 5(External)  
43  
9
Qg(on)  
Qgs  
36  
7
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
13  
RthJC  
RthCS  
0.36 C/W  
C/W  
TO-220  
TO-247 & TO-3P  
0.50  
0.25 C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
20  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
80  
1.4  
250  
trr  
ns  
A
IF = 10A, -di/dt = 100A/s  
IRM  
QRM  
8.0  
0.6  
VR = 100V, VGS = 0V  
μC  
Note  
1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFA20N50P3 IXFA20N50P3  
IXFQ20N50P3 IXFH20N50P3  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
45  
40  
35  
30  
25  
20  
15  
10  
5
20  
18  
16  
14  
12  
10  
8
V
= 10V  
7V  
V
= 10V  
8V  
GS  
GS  
6V  
7V  
6V  
5V  
5.5V  
5V  
6
4
2
0
0
0
0
0
1
2
3
4
5
6
7
16  
45  
0
5
10  
15  
20  
25  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 10A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
20  
18  
16  
14  
12  
10  
8
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 20A  
D
I
= 10A  
D
5V  
6
4.5V  
4V  
4
2
0
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 10A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs. Case Temperature  
24  
20  
16  
12  
8
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
V
= 10V  
GS  
T
J
= 125oC  
T
J
= 25oC  
4
0
5
10  
15  
20  
25  
30  
35  
40  
-50  
-25  
0
25  
50  
75  
100  
125  
ID - Amperes  
TC - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFA20N50P3 IXFA20N50P3  
IXFQ20N50P3 IXFH20N50P3  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
30  
25  
20  
15  
10  
5
20  
18  
16  
14  
12  
10  
8
T
J
= - 40oC  
25oC  
125oC  
T
J
= 125oC  
25oC  
6
- 40oC  
4
2
0
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
3.0  
0.3  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
1.1  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
60  
50  
40  
30  
20  
10  
0
V
= 250V  
DS  
I
I
= 10A  
D
G
= 10mA  
T
= 125oC  
J
T
J
= 25oC  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
5
10  
15  
20  
25  
30  
35  
40  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100  
10  
1
10,000  
1,000  
100  
10  
R
Limit  
DS(on)  
100μs  
C
C
iss  
oss  
T = 150oC  
= 25oC  
J
1ms  
T
C
C
rss  
Single Pulse  
= 1 MHz  
5
f
1
0.1  
10  
15  
20  
25  
30  
35  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFA20N50P3 IXFA20N50P3  
IXFQ20N50P3 IXFH20N50P3  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_20N50P3(W5) 11-14-11  
IXFA20N50P3 IXFA20N50P3  
IXFQ20N50P3 IXFH20N50P3  
TO-263 Outline  
TO-220 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-247 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-3P Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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