SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FZT795A
FEATURES
*
*
140 Volt VCEO
C
Gain of 250 at IC=0.2 Amps and very low VCE(sat)
APPLICATIONS
Battery powered circuits
*
E
COMPLEMENTARY TYPE FZT694B
PARTMARKING DETAIL FZT795A
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-140
Collector-Emitter Voltage
Emitter-Base Voltage
-140
V
-5
V
Peak Pulse Current
-1
-500
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
mA
W
°C
Ptot
2
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C)
amb
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
V(BR)CBO -140
V(BR)CEO -140
V(BR)EBO -5
ICBO
V
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-100V
VEB=-4V
V
V
Cut-Off Currents
-0.1
-0.1
µA
µA
IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.3
-0.3
-0.25
V
V
V
IC=-100mA, IB=-1mA*
IC=-200mA, IB=-5mA*
IC=-500mA, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-0.95
V
IC=-500mA, IB=-50mA*
Base-Emitter
Turn-On Voltage
-0.75
V
IC=-500mA, VCE=-2V*
Static Forward Current
Transfer Ratio
300
250
100
800
IC=-10mA, VCE=-2V*
IC=-200mA, VCE=-2V*
IC=-300mA, VCE=-2V*
Transition Frequency
fT
100
MHz IC=-50mA, VCE=-5V
f=50MHz
Input Capacitance
Output Capacitance
Switching Times
Cibo
225
15
pF
pF
VEB=-0.5V, f=1MHz
VCB=-10V, f=1MHz
Cobo
ton
toff
100
1900
ns
ns
IC=-100mA, IB1=-10mA
IB2=-10mA, VCC=-50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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