SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FZT790A
FEATURES
*
*
Very low equivalent on-resistance; RCE(sat) 125mΩ at 2A
C
Gain of 200 at IC=1 Amp and very low saturation voltage
APPLICATIONS
DC-DC converters, Siren drivers.
E
*
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FZT690B
FZT790A
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-50
Collector-Emitter Voltage
Emitter-Base Voltage
-40
V
-5
V
Peak Pulse Current
-6
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
-3
2
A
Ptot
W
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C)
amb
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
PARAMETER
Breakdown Voltages
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-50
-40
-5
-70
-60
-8.5
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
Collector Cut-Off Current
Emitter Cut-Off Current
-0.1
-10
V
V
CB=-30V
CB=-30V,Tamb=100°C
µA
µA
IEBO
-0.1
V
EB=-4V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.15 -0.25
-0.30 -0.45
-0.40 -0.75
V
V
V
IC=-500mA, IB=-5mA*
IC=-1A, IB=-10mA*
IC=-2A, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.8
-1.0
V
IC=-1A, IB=-10mA*
Base-EmitterTurn-OnVoltage VBE(on)
-0.75
V
IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
300
250
200
150
800
IC=-10mA, VCE=-2V
IC=-500mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
Transition Frequency
fT
100
MHz IC=-50mA, VCE=-5V
f=50MHz
Output Capacitance
Switching Times
Cobo
24
pF
VCB=-10V,f=1MHz
ton
toff
35
600
ns
ns
IC=-500mA,
IB1=-50mA,
I
B2=-50mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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