SOT223 PNP SILICON PLANAR
FZT751
HIGH PERFORMANCE TRANSISTOR
ISSUE 2 FEBRUARY 1995
FEATURES
C
*
*
*
60 Volt VCEO
3 Amp continuous current
Low saturation voltage
E
COMPLEMENTARY TYPE
FZT651
FZT751
C
B
PARTMARKING DETAIL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-80
Collector-Emitter Voltage
-60
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-6
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
IC
-3
2
A
Ptot
W
°C
Tj:Tstg
-55 to +150
= 25°C unless otherwise stated).
MAX.
amb
TYP.
PARAMETER
SYMBOL MIN.
V(BR)CBO -80
UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -60
V(BR)EBO -5
V
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
IE=100µA
Collector Cut-Off Current ICBO
-0.1
-10
VCB=-60V
VCB=-60V,T =100°C
µA
µA
Emitter Cut-Off Current
IEBO
-0.1
VEB=-4V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.15
-0.45
0.3
0.6
V
V
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-0.9
-1.25
V
IC=-1A, IB=-100mA*
Base-Emitter
Turn-On Voltage
-0.8
-1.0
V
IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
70
100
80
200
200
170
150
IC=-50mA, VCE =-2V*
IC=-500mA, VCE =-2V*
IC=-1A, VCE=-2V*
300
40
IC=-2A, VCE =-2V*
Transition Frequency
Switching Times
fT
100
140
MHz
IC=-100mA, VCE=-5V
f=100MHz
ton
40
ns
ns
pF
IC=-500mA, VCC =-10V
IB1=IB2=-50mA
toff
450
Output Capacitance
Cobo
30
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
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