Discrete Power & Signal
Technologies
July 1998
FZT749
C
E
C
B
SOT-223
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
FZT749
Symbol
Parameter
Units
Collector-Emitter Voltage
25
V
VCEO
Collector-Base Voltage
Emitter-Base Voltage
35
5
V
V
VCBO
VEBO
Collector Current - Continuous
3
A
IC
Operating and Storage Junction Temperature Range
-55 to +150
°C
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Max
Characteristic
Symbol
Units
FZT749
Total Device Dissipation
Thermal Resistance, Junction to Ambient
2
W
PD
62.5
°C/W
RqJA
ã
1998 Fairchild Semiconductor Corporation
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fzt749.lwpPrPC 7/10/98 revB
