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IXFX90N60X

型号：

IXFX90N60X

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

254 K

下载PDF手册
Preliminary Technical Information  
X-Class HiPerFETTM  
Power MOSFET  
VDSS = 600V  
ID25 = 90A  
RDS(on) 38m  
IXFK90N60X  
IXFX90N60X  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264P (IXFK)  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
600  
600  
V
V
D
Tab  
S
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
PLUS247 (IXFX)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
90  
200  
A
A
IA  
EAS  
TC = 25C  
TC = 25C  
45  
3
A
J
G
D
Tab  
S
PD  
TC = 25C  
1100  
50  
W
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
G = Gate  
S = Source  
D
= Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Tab = Drain  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
20..120 /4.5..27  
Low Package Inductance  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
600  
V
V
Applications  
2.5  
4.5  
Switch-Mode and Resonant-Mode  
100 nA  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
50 A  
1.5 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
38 m  
© 2015 IXYS CORPORATION, All Rights Reserved  
DS100659B(8/15)  
IXFK90N60X  
IXFX90N60X  
Symbol  
Test Conditions  
Characteristic Values  
TO-264P Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
A
E1  
E
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
30  
50  
S
Q
RGi  
1.0  
R
Q1  
D1  
D
Ciss  
Coss  
Crss  
8500  
6300  
56  
pF  
pF  
pF  
R1  
4
1
2
3
VGS = 0V, VDS = 25V, f = 1MHz  
L1  
D2  
Effective Output Capacitance  
Co(er)  
Co(tr)  
400  
pF  
nF  
c
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
b1  
b
A
1.37  
b2  
e
x2  
1
= Gate  
2,4 = Drain  
= Source  
td(on)  
tr  
td(off)  
tf  
38  
22  
84  
12  
ns  
ns  
ns  
ns  
3
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 1(External)  
Qg(on)  
Qgs  
210  
50  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
90  
RthJC  
RthCS  
0.113 C/W  
C/W  
0.15  
Source-Drain Diode  
PLUS247TM Outline  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
90  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
360  
1.4  
trr  
210  
1.8  
ns  
μC  
A
IF = 45A, -di/dt = 100A/s  
QRM  
IRM  
VR = 100V, VGS = 0V  
16.8  
Terminals: 1 - Gate  
2,4 - Drain  
3 - Source  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFK90N60X  
IXFX90N60X  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
220  
200  
180  
160  
140  
120  
100  
80  
V
= 10V  
GS  
V
= 10V  
9V  
GS  
8V  
7V  
9V  
8V  
60  
6V  
5V  
7V  
6V  
40  
20  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
5
10  
15  
20  
25  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 45A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 90A  
D
I
= 45A  
D
5V  
4V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
9
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 45A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
T = 125ºC  
J
BV  
DSS  
T = 25ºC  
J
V
GS(th)  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXFK90N60X  
IXFX90N60X  
Fig. 7. Maximum Drain Current vs.  
Case Temperature  
Fig. 8. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
= 125ºC  
25ºC  
J
- 40ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
T
J
= 25ºC  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
ID - Amperes  
VSD - Volts  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10  
100,000  
10,000  
1,000  
100  
V
= 300V  
DS  
C
iss  
I
I
= 45A  
D
G
8
6
4
2
0
= 10mA  
C
oss  
10  
C
rss  
= 1 MHz  
f
1
1
10  
100  
1000  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFK90N60X  
IXFX90N60X  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Output Capacitance Stored Energy  
1000  
100  
10  
60  
50  
40  
30  
20  
10  
0
R
Limit  
)
DS(  
on  
25µs  
100µs  
1
1ms  
10ms  
100ms  
T = 150ºC  
J
0.1  
0.01  
DC  
T
C
= 25ºC  
Single Pulse  
10  
100  
1,000  
0
100  
200  
300  
400  
500  
600  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_90N60X(J9-R4T45) 8-17-15-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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