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IXFN94N50P2

型号：

IXFN94N50P2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

180 K

下载PDF手册
Advance Technical Information  
PolarP2TM HiPerFETTM  
Power MOSFET  
VDSS = 500V  
ID25 = 68A  
RDS(on) 55m  
IXFN94N50P2  
trr  
250ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
miniBLOC  
E153432  
S
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
500  
500  
V
V
S
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
D
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
68  
240  
A
A
G = Gate  
S = Source  
D = Drain  
IA  
EAS  
TC = 25C  
TC = 25C  
94  
3.5  
A
J
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
(Gate Return) Terminal.  
PD  
TC = 25C  
780  
30  
W
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Features  
International Standard Package  
miniBLOC, with Aluminium Nitride  
Isolation  
VISOL  
50/60 Hz, RMS, t = 1minute  
2500  
3000  
V~  
V~  
IISOL 1mA,  
t = 1s  
Md  
Mounting Torque for Base Plate  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/lb.in  
Dynamic dv/dt Rating  
Avalanche Rated  
Weight  
30  
g
Fast Intrinsic Diode  
Low QG  
Low RDS(on)  
Low Drain-to-Tab Capacitance  
Low Package Inductance  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Easy to Mount  
Space Savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
500  
V
V
3.0  
5.0  
Applications  
200 nA  
10 A  
DC-DC Converters  
Battery Chargers  
IDSS  
Switch-Mode and Resonant-Mode  
Power Supplies  
TJ = 125C  
2
mA  
Uninterrupted Power Supplies  
AC Motor Drives  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
55 m  
High Speed Power Switching  
Applications  
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100555(8/13)  
IXFN94N50P2  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B miniBLOC (IXFN)  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
40  
75  
S
Ciss  
Coss  
Crss  
13.7  
1320  
30  
nF  
pF  
pF  
RGi  
0.80  
  
td(on)  
tr  
td(off)  
tf  
15  
34  
67  
11  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1(External)  
(M4 screws (4x)  
  
Qg(on)  
Qgs  
220  
73  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
72  
RthJC  
RthCS  
0.16C/W  
0.05C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
94  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS , VGS = 0V, Note 1  
375  
1.5  
trr  
250  
ns  
μC  
A
IF = 47A, -di/dt = 100A/s  
QRM  
IRM  
1.5  
13  
VR = 100V, VGS = 0V  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN94N50P2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
V
= 10V  
8V  
GS  
V
= 10V  
7V  
GS  
7V  
6V  
6V  
5V  
60  
40  
5V  
20  
0
0
1
2
3
4
5
6
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 47A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 94A  
D
I
= 47A  
D
5V  
4V  
0
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 47A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
V
= 10V  
GS  
T = 125ºC  
J
T = 25ºC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
ID - Amperes  
TC - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXFN94N50P2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
140  
120  
100  
80  
120  
100  
80  
60  
40  
20  
0
T
= - 40ºC  
J
T
J
= 125ºC  
25ºC  
- 40ºC  
25ºC  
125ºC  
60  
40  
20  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
V
= 250V  
DS  
I
I
= 47A  
D
G
= 10mA  
T
J
= 125ºC  
T
= 25ºC  
1.1  
J
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.2  
1.3  
1.4  
1.5  
0
50  
100  
150  
200  
250  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
100,000  
10,000  
1,000  
100  
R
Limit  
DS(on)  
= 1 MHz  
f
25µs  
C
iss  
100µs  
C
oss  
1ms  
1
10ms  
T = 150ºC  
J
0.1  
0.01  
C
100ms  
rss  
T
C
= 25ºC  
DC  
Single Pulse  
10  
10  
100  
1,000  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFN94N50P2  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXF_94N50P2(93) 8-19-13-A  
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