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IXFA5N50P3

型号:

IXFA5N50P3

品牌:

IXYS[ IXYS CORPORATION ]

页数:

5 页

PDF大小:

167 K

Preliminary Technical Information  
Polar3 TM HiPerFETTM  
Power MOSFETs  
VDSS = 500V  
ID25 = 5A  
RDS(on) 1.65  
IXFY5N50P3  
IXFA5N50P3  
IXFP5N50P3  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-252 (IXFY)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-263 AA (IXFA)  
TJ = 25C to 150C  
500  
500  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
S
ID25  
IDM  
TC = 25C  
5
A
A
D (Tab)  
TC = 25C, Pulse Width Limited by TJM  
12  
TO-220AB (IXFP)  
IA  
TC = 25C  
TC = 25C  
2.5  
A
EAS  
100  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
35  
V/ns  
W
G
114  
D
D (Tab)  
S
TJ  
-55 ... +150  
150  
C  
C  
C  
G = Gate  
D
= Drain  
TJM  
Tstg  
S = Source  
Tab = Drain  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in  
International Standard Packages  
Fast Intrinsic Rectifier  
Avalanche Rated  
Low RDS(ON) and QG  
Low Package Inductance  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
500  
V
V
3.0  
5.0  
Applications  
100 nA  
A  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
Laser Drivers  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
5
TJ = 125C  
50 μA  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
1.65  
DS100454A(11/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXFY5N50P3 IXFA5N50P3  
IXFP5N50P3  
Symbol  
Test Conditions  
Characteristic Values  
TO-252 AA Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
2.5  
4.2  
S
RGi  
6.0  
Ciss  
Coss  
Crss  
370  
50  
3
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
1. Gate  
2. Drain  
3. Source  
4. Drain  
td(on)  
tr  
td(off)  
tf  
14  
13  
28  
12  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 30(External)  
Dim. Millimeter  
Min. Max.  
Inches  
Min. Max.  
Qg(on)  
Qgs  
6.9  
1.9  
2.6  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25  
A
A1  
2.19 2.38 0.086 0.094  
0.89 1.14 0.035 0.045  
Qgd  
A2  
b
0
0.13  
0
0.005  
0.64 0.89 0.025 0.035  
RthJC  
RthCS  
1.10 C/W  
C/W  
b1  
b2  
0.76 1.14 0.030 0.045  
5.21 5.46 0.205 0.215  
TO-220  
0.50  
c
c1  
0.46 0.58 0.018 0.023  
0.46 0.58 0.018 0.023  
D
D1  
5.97 6.22 0.235 0.245  
4.32 5.21 0.170 0.205  
Source-Drain Diode  
E
E1  
6.35 6.73 0.250 0.265  
4.32 5.21 0.170 0.205  
Symbol  
Test Conditions  
Characteristic Values  
e
e1  
2.28 BSC  
4.57 BSC  
0.090 BSC  
0.180 BSC  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
H
L
9.40 10.42 0.370 0.410  
0.51 1.02 0.020 0.040  
IS  
VGS = 0V, Note1  
5
A
L1  
L2  
L3  
0.64 1.02 0.025 0.040  
0.89 1.27 0.035 0.050  
2.54 2.92 0.100 0.115  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
20  
1.4  
A
V
trr  
QRM  
IRM  
250  
C  
ns  
IF = 2.5A, -di/dt = 100A/μs  
TO-220 Outline  
0.33  
5.30  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
TO-263 Outline  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
1 = Gate  
2 = Drain  
3 = Source  
4 = Drain  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFY5N50P3 IXFA5N50P3  
IXFP5N50P3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
9
8
7
6
5
4
3
2
1
0
5
4
3
2
1
0
VGS = 10V  
8V  
VGS = 10V  
8V  
7V  
6V  
7V  
6V  
5V  
5V  
0
1
2
3
4
5
6
7
8
9
10  
22  
9
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 2.5A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
5
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
7V  
VGS = 10V  
4
3
2
1
0
6V  
I D = 5A  
I D = 2.5A  
5V  
4V  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 2.5A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VGS = 10V  
5
4
3
2
1
0
TJ = 125ºC  
TJ = 25ºC  
0
1
2
3
4
5
6
7
8
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXFY5N50P3 IXFA5N50P3  
IXFP5N50P3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
125ºC  
- 40ºC  
0
1
2
3
4
5
6
7
8
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
ID - Amperes  
VGS - Volts  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
16  
14  
12  
10  
8
VDS = 250V  
I
D = 2.5A  
I G = 10mA  
6
TJ = 125ºC  
TJ = 25ºC  
4
2
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
1
2
3
4
5
6
7
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1,000  
100  
10  
100  
10  
1
RDS(on) Limit  
C
C
iss  
25µs  
100µs  
oss  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
T
= 1 MHz  
5
f
C
rss  
1ms  
1
0.1  
0
10  
15  
20  
25  
30  
35  
40  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFY5N50P3 IXFA5N50P3  
IXFP5N50P3  
Fig. 13. Maximum Transient Thermal Impedance  
aaaaaa  
2
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_5N50P3(K2) 3-23-12  
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