XTS
XTS2312
N-Channel Enhancement Mode Field Effect Transistor
VDS=20V，
ID=4.5A
VGS@4.5V
VGS@2.5V
XTS2312
RDS(ON)< 33mΩ,
RDS(ON)< 40mΩ,
Features
● high dense cell design for extremely low R
DS(ON)
● Rugged and reliable.
● Lead free product is acquired
● SOT-23-3L Package
ABSOLUTE MAXIMUM RATLNGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
20
Unit
V
V
Drain-Source Voltage
Gate- Source Voltage
DS
V
±8
V
GS
I
a
4.5
A
D
Drain Current –Continuous @ T =125℃Pulsed
J
I
13.5
1.25
A
DM
a
P
W
Maximum Power Dissipation
D
T ，T
Operating Junction and Storage Temperature Range
-55 to 150
℃
J
STG
THERMAL CHARACTERISTICS
Parameter
Symbol
Limit
Units
R
100
℃/W
Thermal Resistance，Junction-to-Ambient
θJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0V，ID=250µA
VDS=20V，VGS=0V
VGS=8V，VDS=0V
VGS=-8V，VDS=0V
20
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current For
Gate-Body Leakage Current Rev
ON CHARACTERISTICE b
1
µA
nA
nA
IGSSF
IGSSR
100
-100
VGS(th)
VDS=VGS,ID=50µA
VGS=4.5V,ID=5.0A
VGS=2.5V, ID=4.5A
VDS=10V, ID=5.0A
Gate Threshold Voltage
0.5
1.2
33
40
V
mꢀ
mꢀ
S
27
33
10
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICSC
Input Capacitance
Clss
Coss
CRSS
500
300
140
PF
PF
PF
VDS=8V,VGS=0V,F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICSC
td(on)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Fall Time
VD=10V
ID=1A
20
18
60
28
40
40
ns
ns
ns
ns
tr
td(off)
tf
VGS=4.5V
108
56
RGEN=6ꢀ
