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IXGP50N33TBM-A

型号：

IXGP50N33TBM-A

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

5 页

PDF大小：

148 K

下载PDF手册
Preliminary Technical Information  
Trench Gate  
IGBT  
IXGP50N33TBM-A  
VCES  
ICP  
VCE(sat) ≤ 1.6V  
= 330V  
= 200A  
For PDP Applications  
OVERMOLDED TO-220 W/ FORMED  
LEAD (IXGP...M-A)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VGEM  
TJ = 25°C to 150°C  
330  
V
V
Transient  
±30  
IC25  
TC = 25°C  
30  
200  
75  
A
A
A
C
G
ICP  
TJ ≤ 150°C, tp ≤ 10μs, duty cycle ≤ 1%  
Lead current limit  
IC(RMS)  
Isolated Tab  
E
PC  
TC = 25°C  
50  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
E = Emitter  
C = Collector  
TAB = Isolated  
TJM  
Tstg  
-55 ... +150  
TL  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
TSOLD  
Features  
Md  
Mounting torque  
1.13/10  
2.5  
Nm/lb.in.  
g
•Fast switching  
Weight  
•Plastic overmolded tab for electrical  
•iLsoowlatVioCnE(sat)  
- for minimum on-state conduction  
losses  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
330  
3.0  
Typ. Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA ,VGE = 0V  
IC = 250μA , VCE = VGE  
VCE = 330V  
V
V
Applications  
5.0  
2
μA  
• PDP Systems  
VGE = 0V  
TJ = 125°C  
125 μA  
• Capacitive load circuits  
• Switching power supplies  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
VGE = 15V, IC = 25A  
1.37  
1.35  
1.71  
1.76  
1.60  
V
V
V
V
TJ = 125°C  
TJ = 125°C  
IC = 50A  
DS99930(12/07)  
© 2007 IXYS CORPORATION, All rights reserved  
IXGP50N33TBM-A  
Symbol  
Test Conditions  
Characteristic Values  
OVERMOLDED TO-220 W/ FORMED  
LEAD (IXGP...M-A)  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 25A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
25  
42  
S
Cies  
Coes  
Cres  
1480  
108  
15  
pF  
pF  
pF  
Qg  
42  
9
nC  
nC  
nC  
2 3  
1
Qge  
Qgc  
IC = 25A, VGE = 15V, VCE = 0.5 • VCES  
12  
td(on)  
tri  
td(off)  
tfi  
14  
30  
ns  
ns  
ns  
ns  
Resistive load, TJ = 25°C  
IC = 25A, VGE = 15V  
VCE = 240V, RG = 15Ω  
53  
Terminals: 1 - Gate  
2 - Collector  
142  
3 - Emitter  
td(on)  
tri  
td(off)  
tfi  
13  
32  
ns  
ns  
ns  
ns  
Resistive load, TJ = 125°C  
IC = 25A, VGE = 15V  
VCE = 240V, RG = 15Ω  
74  
270  
RthJC  
2.5 °C/W  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGP50N33TBM-A  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
9V  
7V  
7V  
5V  
5V  
0
0.0  
0.0  
5
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
15  
0
2
4
6
8
10  
12  
14  
16  
18  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 100A  
9V  
7V  
I C = 50A  
0.9  
0.8  
0.7  
5V  
I C = 25A  
50  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
-50  
-25  
0
25  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
I C = 100A  
50A  
25A  
0
6
7
8
9
10  
11  
12  
13  
14  
3.4  
3.8  
4.2  
4.6  
5.0  
5.4  
5.8  
6.2  
VGE - Volts  
VGE - Volts  
© 2007 IXYS CORPORATION, All rights reserved  
IXGP50N33TBM-A  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
VCE = 165V  
C = 25A  
I G = 10 mA  
I
TJ = - 40ºC  
25ºC  
125ºC  
6
4
2
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10,000  
1,000  
100  
f = 1 MHz  
C
ies  
C
oes  
TJ = 150ºC  
RG = 15  
Ω
dV / dt < 10V / ns  
C
res  
10  
60  
90  
120 150 180 210 240 270 300 330 360  
VCE - Volts  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
1000  
100  
10  
10.0  
VCE  
Limit  
(sat)  
1.0  
1µs  
10µs  
100µs  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
T
1ms  
1
0.1  
1
10  
100  
1000  
0.001  
0.01  
0.1  
1
10  
100  
Pulse Width - Seconds  
VCE - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGP50N33TBM-A  
Fig. 14. Resistive Turn-on Rise Time  
vs. Collector Current  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
56  
52  
48  
44  
40  
36  
32  
28  
24  
RG = 15  
Ω
RG = 15  
Ω
VGE = 15V  
VGE = 15V  
VCE = 240V  
VCE = 240V  
TJ = 125ºC  
I C = 50A  
TJ = 25ºC  
I C = 25A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
20  
30  
40  
50  
60  
70  
80  
90  
100  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
100  
26  
24  
22  
20  
18  
16  
14  
12  
10  
350  
80  
75  
70  
65  
60  
55  
50  
45  
t r  
td(on)  
- - - -  
tf  
td(off)  
- - - -  
RG = 15 , VGE = 15V  
90  
80  
70  
60  
50  
40  
30  
20  
300  
250  
200  
150  
100  
50  
TJ = 125ºC, VGE = 15V  
CE = 240V  
Ω
I C = 50A  
I C = 25A  
I C = 50A  
V
VCE = 240V  
I C = 25A  
0
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
15  
20  
25  
30  
35  
40  
45  
50  
55  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times  
vs. Collector Current  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
320  
300  
280  
260  
240  
220  
200  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
400  
350  
300  
250  
200  
150  
100  
50  
80  
75  
70  
65  
60  
55  
50  
45  
40  
tf  
td(off)  
- - - -  
RG = 15 , VGE = 15V  
tf  
td(off  
) - - - -  
Ω
TJ = 125ºC, VGE = 15V  
CE = 240V  
VCE = 240V  
V
TJ = 125ºC  
I C = 25A  
I C = 50A  
TJ = 25ºC  
60  
40  
20  
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
20  
30  
40  
50  
60  
70  
80  
90  
100  
IC - Amperes  
RG - Ohms  
© 2007 IXYS CORPORATION, All rights reserved  
IXYS REF: G_50N33TB(2G)12-11-07  
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