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3SK254-U1E

型号:

3SK254-U1E

品牌:

NEC[ NEC ]

页数:

6 页

PDF大小:

50 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
3SK254  
RF AMPLIFIER FOR CATV TUNER  
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR  
4 PINS SUPER MINI MOLD  
FEATURES  
PACKAGE DIMENSIONS  
Low VDD Use  
:
(VDS = 3.5 V)  
(Unit: mm)  
Driving Battery  
2.1±0.2  
Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz)  
NF2 = 0.8 dB TYP. (f = 55 MHz)  
1.25±0.1  
High Power Gain : GPS = 19.0 dB TYP. (f = 470 MHz)  
Suitable for use as RF amplifier in CATV tuner.  
Automatically Mounting : Embossed Type Taping  
Small Package  
:
4 Pins Super Mini Mold  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Drain to Source Voltage  
Gate1 to Source Voltage  
Gate2 to Source Voltage  
Gate1 to Drain Voltage  
Gate2 to Drain Voltage  
Drain Current  
VDSX  
VG1S  
VG2S  
VG1D  
VG2D  
ID  
18  
±8*1  
±8*1  
V
V
V
18  
V
18  
V
25  
130*2  
mA  
mW  
°C  
°C  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
PD  
Tch  
125  
Tstg  
–55 to +125  
PIN CONNECTIONS  
1. Source  
2. Drain  
3. Gate2  
4. Gate1  
*1: RL 10 kΩ  
*2: Free air  
PRECAUTION:  
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage  
or fields.  
Document No. P10585EJ2V0DS00 (2nd edition)  
(Previous No. TD-2307)  
Date Published August 1995 P  
Printed in Japan  
1993  
©
3SK254  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTIC  
Drain to Source Breakdown Voltage  
Drain Current  
SYMBOL  
BVDSX  
IDSX  
MIN.  
18  
TYP.  
MAX.  
UNIT  
V
TEST CONDITIONS  
VG1S = VG2S = –2 V, ID = 10 µA  
0.1  
–1.0  
0
5.0  
+1.0  
1.0  
mA  
V
VDS = 3.5 V, VG2S = 3 V, VG1S = 0.5 V  
VDS = 3.5 V, VG2S = 3 V, ID = 10 µA  
VDS = 3.5 V, VG1S = 3 V, ID = 10 µA  
VDS = 0, VG2S = 0, VG1S = ±6 V  
VDS = 0, VG1S = 0, VG2S = ±6 V  
Gate1 to Source Cutoff Voltage  
Gate2 to Source Cutoff Voltage  
Gate1 Reverse Current  
VG1S(off)  
VG2S(off)  
IG1SS  
0
0.5  
V
±20  
±20  
nA  
nA  
Gate2 Reverse Current  
IG2SS  
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA  
f = 1 kHz  
Forward Transfer Admittance  
|yfs|  
14  
18  
23  
mS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Power Gain  
Ciss  
Coss  
Crss  
Gps  
2.4  
0.9  
2.9  
1.2  
0.01  
19  
3.4  
1.5  
0.03  
22  
pF  
pF  
pF  
dB  
dB  
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA  
f = 1 MHz  
16  
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA  
f = 470 MHz  
Noise Figure 1  
NF1  
2.0  
3.0  
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA  
f = 55 MHz  
Noise Figure 2  
NF2  
0.8  
2.3  
dB  
IDSX Classification  
Rank  
Marking  
IDSX (mA)  
U1E  
U1E  
0.1 to 0.5  
2
3SK254  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
25  
20  
15  
10  
5
V
G2S = 3 V  
V
G1S = 1.6 V  
200  
1.4 V  
130 mW  
1.2 V  
1.0 V  
100  
0.8 V  
0.6 V  
0
25  
50  
75  
100  
125  
0
5
10  
Ta  
– Ambient Temperature – °C  
VDS – Drain to Source Voltage – V  
DRAIN CURRENT vs.  
GATE1 TO SOURCE VOLTAGE  
FORWARD TRANSFER ADMITTANCE vs.  
GATE1 TO SOURCE VOLTAGE  
25  
20  
15  
10  
5
40  
32  
24  
16  
8
V
DS = 3.5 V  
3.0 V  
2.5 V  
V
DS = 3.5 V  
f = 1 kHz  
V
G2S = 3.5 V  
2.0 V  
V
G2S = 3.5 V  
3.0 V  
2.0 V 2.5 V  
1.5 V  
1.5 V  
1.0 V  
2.0  
1.0 V  
0
0.5  
1.0  
1.5  
2.5  
0
0.5  
1.0  
1.5  
2.0  
2.5  
VG1S – Gate1 to Source Voltage – V  
VG1S – Gate1 to Source Voltage – V  
INPUT CAPACITANCE vs.  
GATE2 TO SOURCE VOLTAGE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
40  
32  
24  
16  
8
5.0  
4.0  
3.0  
2.0  
I
D
= 7 mA  
V
DS = 3.5 V  
(at VDS = 3.5 V,  
f = 1 kHz  
VG2S = 3 V)  
f = 1 MHz  
V
G2S = 3.5 V  
3.0 V  
2.5 V  
1.0  
0
1.5 V  
8
2.0 V  
16  
1.0 V  
4
0
12  
20  
–1.0  
0
1.0  
2.0  
3.0  
4.0  
I
D
– Drain Current – mA  
VG2S – Gate2 to Source Voltage – V  
3
3SK254  
OUTPUT CAPACITANCE vs.  
GATE2 TO SOURCE VOLTAGE  
POWER GAIN AND NOISE FIGURE vs.  
GATE2 TO SOURCE VOLTAGE  
2.5  
2.0  
1.5  
1.0  
10  
I
D
= 7 mA  
I
D
= 7 mA  
(at VDS = 3.5 V,  
G2S = 3.0 V)  
G
PS  
20  
10  
(at VDS = 3.5 V,  
VG2S = 3.0 V)  
V
f = 470 MHz  
f = 1 MHz  
5
0
–10  
–20  
NF  
0.5  
0
0
–1.0  
0
1.0  
2.0  
3.0  
4.0  
–1.0  
0
1.0  
2.0  
3.0  
4.0  
VG2S – Gate2 to Source Voltage – V  
VG2S – Gate2 to Source Voltage – V  
4
3SK254  
GPS AND NF TEST CIRCUIT AT f = 470 MHz  
V
G2S  
1 000 pF  
22 kΩ  
1 000 pF  
Ferrite Beads  
40 pF OUTPUT  
INPUT 40 pF  
50 Ω  
L2  
L1  
50 Ω  
1 000 pF  
15 pF  
15 pF  
1 000 pF  
22 kΩ  
L
3
1 000 pF  
1 000 pF  
φ
φ
1.2 mm U.E.W 5 mm 1T  
L1  
L2  
L3  
:
VG1S  
V
DS  
φ
: φ1.2 mm U.E.W 5 mm 1T  
µ
: REC 2.2  
H
NF TEST CIRCUIT AT f = 55 MHz  
V
G2S  
VDS  
RFC  
2.2 kΩ  
Ferrite Beads  
1 500 pF  
1 500 pF  
1 000 pF  
47  
OUTPUT  
INPUT  
50 Ω  
47 kΩ  
27 pF  
27 pF  
3.3 kΩ  
3.3  
kΩ  
kΩ  
50 Ω  
1 000 pF  
V
G1S  
5
3SK254  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  
厂商 型号 描述 页数 下载

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