IXFT50N60P3 IXFQ50N60P3
IXFH50N60P3
Symbol
Test Conditions
Characteristic Values
TO-3P Outline
(TJ = 25C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
32
55
S
Ciss
Coss
Crss
6300
630
2.5
pF
pF
pF
RGi
Gate Input Resistance
1.0
td(on)
tr
td(off)
tf
31
20
62
17
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External)
Qg(on)
Qgs
94
27
23
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.12 C/W
C/W
(TO-247 & TO-3P)
0.25
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
50
A
A
V
TO-247 Outline
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
200
1.4
trr
250
ns
A
P
IF = 25A, -di/dt = 100A/s
1
2
3
IRM
QRM
11
1.1
VR = 100V, VGS = 0V
μC
Note
1. Pulse test, t 300s, duty cycle, d 2%.
e
Terminals: 1 - Gate
2 - Drain
3 - Source
TO-268 Outline
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Terminals: 1 - Gate
3 - Source
2,4 - Drain
P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
