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VUO162-16NO7

型号：

VUO162-16NO7

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

151 K

下载PDF手册
VUO120-16NO2T  
3~  
Rectifier  
Standard Rectifier Module  
VRRM  
IDAV  
IFSM  
V
= 1600  
180 A  
=
=
1100 A  
3~ Rectifier Bridge + NTC  
Part number  
VUO120-16NO2T  
Backside: isolated  
M1/O1  
W5 W6  
NTC  
~A6  
~E6  
~K6  
M10/O10  
V2-Pack  
Features / Advantages:  
Applications:  
Package:  
● Package with DCB ceramic  
● Reduced weight  
● Diode for main rectification  
● Isolation Voltage:  
● Industry standard outline  
● RoHS compliant  
● Soldering pins for PCB mounting  
● Height: 17 mm  
● Base plate: DCB ceramic  
● Reduced weight  
V~  
3600  
● For three phase bridge configurations  
● Supplies for DC power equipment  
● Input rectifiers for PWM inverter  
● Battery DC power supplies  
● Improved temperature and power cycling  
● Planar passivated chips  
● Very low forward voltage drop  
● Very low leakage current  
● NTC  
● Field supply for DC motors  
● Advanced power cycling  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130604b  
© 2013 IXYS all rights reserved  
VUO120-16NO2T  
Ratings  
Rectifier  
Conditions  
Symbol  
VRSM  
Definition  
min. typ. max. Unit  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
1700  
1600  
100  
2
V
V
max. non-repetitive reverse blocking voltage  
max. repetitive reverse blocking voltage  
VRRM  
IR  
reverse current  
VR = 1600 V  
VR = 1600 V  
µA  
mA  
V
forward voltage drop  
VF  
60  
1.16  
1.55  
1.09  
1.59  
180  
IF =  
A
V
IF = 180 A  
IF = 60 A  
IF = 180 A  
TC = 90°C  
rectangular  
TVJ  
=
°C  
V
125  
V
bridge output current  
TVJ = 150°C  
TVJ = 150°C  
A
IDAV  
d = ⅓  
VF0  
0.81  
V
threshold voltage  
slope resistance  
for power loss calculation only  
rF  
4.4 mΩ  
0.6 K/W  
K/W  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
Ptot  
0.2  
TC = 25°C  
TVJ = 45°C  
VR = 0 V  
205  
1.10  
1.19  
935  
W
kA  
kA  
A
total power dissipation  
max. forward surge current  
IFSM  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
VR = 400 V; f = 1 MHz  
TVJ = 150°C  
VR = 0 V  
1.01  
kA  
value for fusing  
I²t  
TVJ = 45°C  
VR = 0 V  
6.05 kA²s  
5.89 kA²s  
4.37 kA²s  
4.25 kA²s  
pF  
TVJ = 150°C  
VR = 0 V  
CJ  
TVJ = 25°C  
37  
junction capacitance  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130604b  
© 2013 IXYS all rights reserved  
VUO120-16NO2T  
Ratings  
Package V2-Pack  
Symbol  
IRMS  
Definition  
Conditions  
per terminal  
min. typ. max.  
100  
Unit  
A
°C  
°C  
g
RMS current  
Tstg  
-40  
-40  
125  
150  
storage temperature  
virtual junction temperature  
TVJ  
Weight  
MD  
76  
2
2.5 Nm  
mounting torque  
terminal to terminal  
terminal to backside  
dSpp/App  
dSpb/Apb  
6.0  
12.0  
mm  
mm  
V
creepage distance on surface | striking distance through air  
t = 1 second  
V
3600  
3000  
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL ≤ 1 mA  
t = 1 minute  
V
XXXXXXXXXXXXX  
yywwx  
Logo  
UL  
Part name  
Date code Prod. line  
Ordering  
Standard  
Part Number  
Marking on Product  
Delivery Mode  
Box  
Quantity Code No.  
VUO120-16NO2T  
VUO120-16NO2T  
6
510996  
Similar Part  
Package  
Voltage class  
1200  
VUO120-12NO2T  
V2-Pack  
105  
104  
Temperature Sensor NTC  
Symbol Definition  
Conditions  
TVJ = 25°  
min. typ. max. Unit  
resistance  
R25  
4.75  
5
5.25  
kΩ  
R
temperature coefficient  
3375  
B25/50  
K
[
]
103  
TVJ = 150°C  
* on die level  
Equivalent Circuits for Simulation  
Rectifier  
V0  
102  
I
R0  
0
25  
50  
75  
100 125 150  
TC [°C]  
threshold voltage  
slope resistance *  
V0 max  
R0 max  
0.81  
3.2  
V
Typ. NTC resistance vs. temperature  
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130604b  
© 2013 IXYS all rights reserved  
VUO120-16NO2T  
Outlines V2-Pack  
Detail Y  
M 5:1  
Detail X  
M 2:1  
Ø1.5 (DIN 46 431)  
Ø 6.1  
Ø 2.5  
ꢀ
0.5±0.2  
Ø 2.1  
65  
93  
38  
40.4  
78.5±0.3  
28.8±0.3  
16.4±0.3 7.4 ±0.3  
4±0.3  
28.8±0.3  
4x45°  
3.4  
±0.3  
R1  
1
2
3
1
2
3
4
5
6
7
4
5
6
7
8
9
10  
8
9
10  
40±0.15  
80±0.3  
0.5  
Aufdruck derTypenbezeichnung  
M1/O1  
W5 W6  
NTC  
~A6  
~E6  
~K6  
M10/O10  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130604b  
© 2013 IXYS all rights reserved  
VUO120-16NO2T  
Rectifier  
104  
50 Hz  
200  
900  
800  
700  
600  
500  
400  
50Hz, 80% VRRM  
0.8 x V RRM  
160  
120  
TVJ = 45°C  
IFSM  
[A]  
TVJ= 45°C  
IF  
[A2s]  
80  
TVJ= 150°C  
[A]  
TVJ = 150°C  
T
VJ = 150°C  
40  
TVJ = 125°C  
TVJ  
=
25°C  
1.5  
103  
0
0.5  
1.0  
1
2
3
4 5 6 7 8 9  
0.001  
0.01  
0.1  
1
t [ms]  
t [s]  
VF [V]  
Fig. 1 Forward current vs.  
voltage drop per diode  
Fig. 2 Surge overload current  
vs. time per diode  
Fig. 3 I2t vs. time per diode  
100  
80  
RthA  
:
160  
120  
0.2 K/W  
0.4 K/W  
0.6 K/W  
0.8 K/W  
1.0 K/W  
2.0 K/W  
DC =  
1
0.5  
DC =  
1
0.5  
0.4  
P
tot 60  
0.33  
0.17  
0.08  
0.4  
IFAVM  
0.33  
0.17  
0.08  
[W]  
80  
40  
0
40  
20  
0
[A]  
0
20  
40  
60  
80  
0
25 50 75 100 125 150 175  
0
25 50 75 100 125 150  
IF(AV)M [A]  
Tamb [°C]  
TC [°C]  
Fig. 4 Power dissipation vs. forward current  
and ambient temperature per diode  
Fig. 5 Max. forward current vs.  
case temperature per diode  
0.6  
ZthJC  
0.4  
[K/W]  
Ri  
ti  
0.060 0.020  
0.003 0.010  
0.150 0.225  
0.243 0.800  
0.144 0.580  
0.2  
0.0  
1
10  
100  
1000  
10000  
t [ms]  
Fig. 6 Transient thermal impedance junction to case vs. time per diode  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130604b  
© 2013 IXYS all rights reserved  
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