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IXGF20N300

型号：

IXGF20N300

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

190 K

下载PDF手册
VCES = 3000V  
IC25 = 22A  
VCE(sat) ≤ 3.2V  
High Voltage IGBT  
For Capacitor Discharge  
Applications  
IXGF20N300  
( Electrically Isolated Tab)  
ISOPLUS i4-PakTM  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
3000  
3000  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
1
2
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
Isolated Tab  
5
IC25  
IC90  
ICM  
TC = 25°C  
22  
14  
A
A
A
1 = Gate  
2 = Emitter  
5 = Collector  
TC = 90°C  
TC = 25°C, VGE = 20V, 1ms  
103  
SSOA  
VGE= 20V, TVJ = 125°C, RG = 10Ω  
ICM = 200  
A
(RBSOA)  
Clamped Inductive Load  
TC = 25°C  
@0.8 • VCES  
Features  
PC  
100  
W
ꢀ
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
4000V Electrical Isolation  
High Peak Current Capability  
Low Saturation Voltage  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
-55 ... +150  
TL  
TSOLD  
1.6 mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Molding Epoxies Meet UL 94 V-0  
Flammability Classification  
FC  
Mounting Force  
20..120/4.5..27  
Nm/lb-in.  
VISOL  
Weight  
50/60Hz, 1 Minute  
4000  
6
V~  
g
Applications  
ꢀ
Capacitor Discharge  
Pulser Circuits  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
ꢀ
(TJ = 25°C, Unless Otherwise Specified)  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
3000  
3.0  
V
V
Advantages  
5.0  
25 μA  
mA  
ꢀ
High Power Density  
Note 2, TJ = 125°C  
2
ꢀ
Easy to Mount  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
3.2  
VCE(sat)  
IC = 20A, VGE = 15V, Note 1  
V
DS100099B(11/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGF20N300  
ISOPLUS i4-PakTM (HV) Outline  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 20A, VCE = 10V, Note 1  
VGE = 20V, VCE = 20V, Note 1  
8
12  
S
A
IC(ON)  
180  
Cies  
Coes  
Cres  
1125  
48  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
IC = 20A, VGE = 15V, VCE = 600V  
16  
Qg  
31  
5.8  
12  
nC  
nC  
nC  
Qge  
Qgc  
td(on)  
38  
ns  
Resistive Switching Times  
IC = 20A, VGE = 15V  
Pin 1 = Gate  
Pin 2 = Emitter  
Pin 3 = Collector  
Tab 4 = Isolated  
tr  
td(off)  
486  
145  
ns  
ns  
VCE = 960V, RG = 10Ω  
tf  
210  
ns  
RthJC  
RthCS  
RthJA  
1.25 °C/W  
°C/W  
0.15  
30  
°C/W  
Notes:  
1. Pulse test, t < 300μs, duty cycle, d < 2%.  
2. Device must be heatsunk for high-temperature leakage current  
measurements to avoid thermal runaway.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGF20N300  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
220  
200  
180  
160  
140  
120  
100  
80  
VGE = 25V  
VGE = 25V  
20V  
20V  
15V  
15V  
10V  
10V  
5V  
60  
40  
20  
5V  
0
0
-50  
4
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
24  
150  
13  
0
1
2
3
4
5
6
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGE = 25V  
20V  
VGE = 15V  
I C = 80A  
15V  
10V  
I C = 40A  
5V  
I C = 20A  
0
1
2
3
4
5
6
7
8
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
80  
70  
60  
50  
40  
30  
20  
10  
0
10  
9
TJ = - 40ºC  
VGE = 15V  
25ºC  
125ºC  
8
I C = 80A  
7
6
5
40A  
4
3
20A  
12  
2
5
6
7
8
9
10  
11  
12  
7
8
9
10  
11  
13  
14  
15  
16  
17  
18  
19  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGF20N300  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
18  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
I
I
C = 20A  
G = 10mA  
25ºC  
125ºC  
6
6
4
4
2
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0
4
8
12  
16  
20  
24  
28  
32  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
10,000  
1,000  
100  
220  
200  
180  
160  
140  
120  
100  
80  
= 1 MHz  
f
C
ies  
C
oes  
60  
TJ = 125ºC  
40  
RG = 10Ω  
dv / dt < 10V / ns  
C
res  
20  
0
10  
600  
900  
1200  
1500  
1800  
2100  
2400  
2700  
3000  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
10.0  
1.0  
0.1  
0.0  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGF20N300  
Fig. 13. Resistive Turn-on Rise Time  
vs. Collector Current  
Fig. 12. Resistive Turn-on Rise Time  
vs. Junction Temperature  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
1000  
900  
800  
700  
600  
500  
400  
300  
RG = 10Ω , VGE = 15V  
VCE = 960V  
TJ = 125ºC  
I C = 40A  
RG = 10Ω , VGE = 15V  
CE = 960V  
V
I C = 20A  
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
20  
30  
40  
50  
IC - Amperes  
60  
70  
80  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Switching Times  
vs. Gate Resistance  
240  
230  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
170  
165  
160  
155  
150  
145  
140  
135  
130  
125  
120  
115  
2,000  
1,800  
1,600  
1,400  
1,200  
1,000  
800  
350  
t f  
td(off  
) - - - -  
t r  
t
d(on) - - - -  
300  
250  
200  
150  
100  
50  
RG = 10Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 960V  
VCE = 960V  
I C = 20A  
I C = 20A, 40A  
I C = 40A  
600  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
10  
100  
1000  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Collector Current  
240  
200  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
2700  
2400  
2100  
1800  
1500  
1200  
900  
t f  
td(off  
) - - - -  
t r  
t
d(on) - - - -  
220  
200  
180  
160  
140  
120  
180  
160  
140  
120  
100  
80  
RG = 10Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 960V  
VCE = 960V  
TJ = 25ºC  
I C = 20A, 40A  
TJ = 125ºC  
600  
300  
0
10  
100  
1000  
20  
30  
40  
50  
IC - Amperes  
60  
70  
80  
RG - Ohms  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_20N250(4P-P528)11-18-09-B  
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