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VUO36-08NO8

型号:

VUO36-08NO8

品牌:

IXYS[ IXYS CORPORATION ]

页数:

5 页

PDF大小:

133 K

VUO36-08NO8  
3~  
Rectifier  
Standard Rectifier Module  
VRRM  
IDAV  
IFSM  
V
800  
=
=
=
27 A  
550 A  
3~ Rectifier Bridge  
Part number  
VUO36-08NO8  
-
~ ~ ~  
+
FO-B  
Package:  
Features / Advantages:  
Applications:  
Planar passivated chips  
Diode for main rectification  
Industry standard outline  
RoHS compliant  
¼“ fast-on terminals  
Very low leakage current  
Very low forward voltage drop  
Improved thermal behaviour  
For three phase bridge configurations  
Supplies for DC power equipment  
Input rectifiers for PWM inverter  
Battery DC power supplies  
Easy to mount with one screw  
Field supply for DC motors  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130529c  
© 2013 IXYS all rights reserved  
VUO36-08NO8  
Ratings  
Rectifier  
Conditions  
Symbol  
VRSM  
Definition  
min. typ. max. Unit  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 150°C  
TVJ = 25°C  
900  
800  
40  
V
V
max. non-repetitive reverse blocking voltage  
max. repetitive reverse blocking voltage  
VRRM  
IR  
reverse current  
VR = 800 V  
VR = 800 V  
µA  
1.5 mA  
forward voltage drop  
VF  
15  
1.04  
V
V
V
V
A
IF =  
A
1.23  
0.93  
1.18  
27  
IF = 45 A  
IF = 15 A  
IF = 45 A  
TC = 85°C  
rectangular  
TVJ  
=
°C  
125  
bridge output current  
TVJ = 150°C  
TVJ = 150°C  
IDAV  
d =  
VF0  
0.76  
V
threshold voltage  
slope resistance  
for power loss calculation only  
rF  
9.1 mΩ  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
Ptot  
7
K/W  
K/W  
W
1
TC = 25°C  
TVJ = 45°C  
VR = 0 V  
17  
550  
595  
470  
505  
total power dissipation  
max. forward surge current  
IFSM  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
VR = 400 V; f = 1 MHz  
A
A
TVJ = 150°C  
VR = 0 V  
A
A
value for fusing  
I²t  
TVJ = 45°C  
VR = 0 V  
1.52 kA²s  
1.48 kA²s  
1.11 kA²s  
1.06 kA²s  
pF  
TVJ = 150°C  
VR = 0 V  
CJ  
TVJ = 25°C  
18  
junction capacitance  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130529c  
© 2013 IXYS all rights reserved  
VUO36-08NO8  
Ratings  
Package FO-B  
Symbol  
IRMS  
Definition  
Conditions  
per terminal  
min. typ. max.  
100  
Unit  
A
°C  
°C  
g
RMS current  
Tstg  
-40  
-40  
125  
150  
storage temperature  
virtual junction temperature  
TVJ  
Weight  
MD  
20  
1.8  
7.0  
2.2 Nm  
mounting torque  
terminal to terminal  
terminal to backside  
dSpp/App  
dSpb/Apb  
9.0  
mm  
mm  
V
creepage distance on surface | striking distance through air  
10.0 10.0  
3000  
t = 1 second  
V
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL 1 mA  
t = 1 minute  
2500  
V
Logo  
YYWW  
XXX XX-XXXXX  
Marking on product  
Date Code  
Ordering  
Standard  
Part Number  
Marking on Product  
VUO36-08NO8  
Delivery Mode  
Box  
Quantity Code No.  
VUO36-08NO8  
50  
502548  
TVJ = 150°C  
* on die level  
Equivalent Circuits for Simulation  
Rectifier  
V0  
I
R0  
threshold voltage  
slope resistance *  
V0 max  
R0 max  
0.76  
7.9  
V
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130529c  
© 2013 IXYS all rights reserved  
VUO36-08NO8  
Outlines FO-B  
6.3 x 0.8  
12 ±0.3  
D
C
B
E
A
28.5 ±0.2  
-
~ ~ ~  
+
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130529c  
© 2013 IXYS all rights reserved  
VUO36-08NO8  
Rectifier  
450  
400  
350  
60  
1600  
1200  
50 Hz  
VR = 0 V  
0.8 x V RRM  
50  
40  
IF  
IFSM  
TVJ = 45°C  
I2t  
30  
TVJ = 45°C  
[A]  
800  
[A2s]  
[A]  
300  
250  
200  
TVJ = 150°C  
20  
10  
TVJ = 150°C  
TVJ  
=
125°C  
150°C  
400  
TVJ = 25°C  
1.2  
0
0.4  
10-3  
10-2  
10-1  
100  
0.8  
1
10  
t [ms]  
VF [V]  
t [s]  
Fig. 1 Forward current vs.  
voltage drop per diode  
Fig. 2 Surge overload current  
vs. time per diode  
Fig. 3 I2t vs. time per diode  
10  
8
24  
20  
16  
RthJA  
:
DC =  
1
0.5  
DC =  
1
0.6 KW  
0.8 KW  
0.4  
0.5  
1
2
4
8
KW  
KW  
KW  
KW  
0.33  
0.17  
0.08  
0.4  
6
0.33  
0.17  
0.08  
IF(AV)M  
Ptot  
[W]  
12  
8
[A]  
4
2
4
0
0
0
2
4
6
8
10 0  
25  
50  
75 100 125 150 175  
0
25 50 75 100 125 150  
TA [°C]  
IF(AV)M [A]  
TC [°C]  
Fig. 4 Power dissipation vs. forward current  
and ambient temperature per diode  
Fig. 5 Max. forward current vs.  
case temperature per diode  
8
6
4
Constants for ZthJC calculation:  
ZthJC  
i
Rth (K/W)  
ti (s)  
[K/W]  
1
2
3
4
0.040  
0.150  
1.710  
5.100  
0.005  
0.030  
0.400  
2.300  
2
0
1
10  
100  
1000  
10000  
100000  
t [ms]  
Fig. 6 Transient thermal impedance junction to case vs. time per diode  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130529c  
© 2013 IXYS all rights reserved  
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