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3SK230-U1A

型号:

3SK230-U1A

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

66 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
3SK230  
RF AMP. FOR VHF/CATV TUNER  
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR  
4 PINS MINI MOLD  
FEATURES  
PACKAGE DIMENSIONS  
The Characteristic of Cross-Modulation is good.  
(Unit: mm)  
CM = 108 dB (TYP.) @f = 470 MHz, GR = 30 dB  
+0.2  
–0.3  
2.8  
Low Noise Figure  
NF1 = 2.2 dB TYP. (@ = 470 MHz)  
NF2 = 0.9 dB TYP. (@ = 55 MHz)  
GPS = 19.5 dB TYP. (@ = 470 MHz)  
+0.2  
–0.1  
1.5  
High Power Gain  
Enhancement Typ.  
Suitable for use as RF amplifier in CATV tuner.  
Automatically Mounting: Embossed Type Taping  
Small Package: 4 Pins Mini Mold Package. (SC-61)  
5°  
5°  
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)  
Drain to Source Voltage  
Gate1 to Source Voltage  
Gate2 to Source Voltage  
Gate1 to Drain Voltage  
Gate2 to Drain Voltage  
Drain Current  
VDSX  
VG1S  
VG2S  
VG1D  
VG2D  
ID  
18  
±8(±10)*1  
±8(±10)*1  
18  
V
V
V
V
18  
V
5°  
5°  
25  
mA  
mW  
C
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
RL 10 k  
PD  
200  
PIN CONNECTIONS  
1. Source  
2. Drain  
3. Gate 2  
4. Gate 1  
Tch  
125  
Tstg  
55 to +125  
C
PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due  
to those voltages or fields.  
Document No. P10587EJ3V0DS00 (3rd edition)  
Date Published November 1996 N  
Printed in Japan  
©
1993  
3SK230  
ELECTRICAL CHARACTERISTICS (TA = 25 C)  
CHARACTERISTIC  
SYMBOL  
MIN.  
18  
TYP.  
MAX.  
UNIT  
V
TEST CONDITIONS  
Drain to Source Breakdown  
Voltage  
BVDSX  
VG1S = VG2S = 2 V, ID = 10 A  
Drain Current  
IDSX  
VG1S(off)  
VG2S(off)  
IG1SS  
0.01  
0
8.0  
+1.0  
+1.6  
±20  
±20  
24  
mA  
V
VDS = 6 V, VG2S = 4.5 V, VG1S = 0.75 V  
Gate1 to Source Cutoff Voltage  
Gate2 to Source Cutoff Voltage  
Gate1 Reverse Current  
Gate2 Reverse Current  
Forward Transfer Admittance  
VDS = 6 V, VG2S = 3 V, ID = 10  
VDS = 6 V, VG1S = 3 V, ID = 10  
VDS = VG2S = 0, VG1S = ±8 V  
VDS = VG1S = 0, VG2S = ±8 V  
A
A
+0.6  
+1.1  
20  
V
nA  
nA  
mS  
IG2SS  
| yfs |  
16  
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA  
f = 1 kHz  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Power Gain  
Ciss  
Coss  
Crss  
Gps  
2.3  
0.9  
2.8  
1.2  
3.3  
1.5  
pF  
pF  
pF  
dB  
dB  
dB  
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA  
f = 1 MHz  
0.015  
19.5  
2.2  
0.03  
22.5  
3.2  
16.5  
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA  
f = 470 MHz  
Noise Figure 1  
NF1  
NF2  
Noise Figure 2  
0.9  
2.4  
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA  
f = 55 MHz  
IDSX Classification  
Rank  
U1A  
U1A  
U1B  
Marking  
IDSX (mA)  
U1B  
0.01 to 3.0  
1.0 to 8.0  
2
3SK230  
CHARACTERISTIC CURVE (TA = 25 C)  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
Free Air  
VG2S = 4.5 V  
50  
40  
30  
20  
10  
400  
300  
200  
100  
V
G1S = 3 V  
2.5 V  
2.0 V  
1.5 V  
1.0 V  
0.5 V  
0
5
10  
V
DS - Drain to Source Voltage - V  
0
25  
50  
75  
100  
125  
T
A
- Ambient Temperature - °C  
DRAIN CURRENT vs.  
GATE1 TO SOURCE VOLTAGE  
FORWARD TRANSFER ADMITTANCE vs.  
GATE1 TO SOURCE VOLTAGE  
V
DS = 6 V  
V
DS = 6 V  
25  
20  
15  
10  
25  
f = 1 kHz  
VG2S = 5 V  
20  
15  
10  
4 V  
3 V  
2.0 V  
1.5 V  
5
0
5
0
2 V  
–1  
0
1
2
3
4
–1  
0
1
2
3
4
V
GIS - Gate 1 to Source Voltage - V  
VGIS - Gate1 to Source Voltage - V  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
INPUT CAPACITANCE vs.  
GATE2 TO SOURCE VOLTAGE  
5.0  
4.0  
3.0  
2.0  
1.0  
ID = 10 mA  
V
DS = 6 V  
40  
32  
24  
16  
8
(at VDS = 6 V  
VG2S = 4.5 V)  
f = 1 MHZ  
f = 1 kHz  
V
G2S = 6 V  
5 V  
4 V  
2 V  
3 V  
0
4
8
12  
16  
20  
ID  
- Drain Current - mA  
0
1.0  
2.0  
3.0  
4.0  
5.0  
VG2S - Gate2 to Source Voltage - V  
3
3SK230  
OUTPUT CAPACITANCE vs.  
POWER GAIN AND NOISE FIGURE vs.  
GATE2 TO SOURCE VOLTAGE  
GATE2 TO SOURCE VOLTAGE  
10  
2.5  
2.0  
1.5  
1.0  
0.5  
I
D
= 10 mA  
(at VDS = 6 V  
G2S = 4.5 V)  
f = 1 MH  
f = 470 MHz  
G
ps  
ID = 10 mA  
2.0  
1.0  
0
V
(at VDS = 6 V  
Z
V
G2S = 4.5 V)  
5
–1.0  
NF  
–2.0  
0
0
0
1.0  
2.0  
3.0  
4.0  
5.0  
1.0  
2.0  
3.0  
4.0  
5.0  
V
G2S - Gate2 to Source Voltage - V  
VG2S - Gate2 to Source Voltage - V  
S-PARAMETER  
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA, (Zo = 50  
)
FREQUENCY  
S11  
S21  
S12  
S22  
MHz  
100  
200  
300  
400  
500  
600  
MAG  
1.000  
0.960  
0.926  
0.876  
0.853  
0.842  
ANG  
14.7  
24.5  
34.3  
45.0  
54.4  
63.1  
MAG  
2.160  
1.953  
1.868  
1.760  
1.691  
1.608  
ANG  
160.5  
148.3  
135.8  
121.2  
109.4  
97.6  
MAG  
0.008  
0.003  
0.005  
0.003  
0.003  
0.004  
ANG  
12.8  
81.1  
146.8  
59.5  
84.3  
87.0  
MAG  
0.942  
0.947  
0.906  
0.908  
0.915  
0.889  
ANG  
8.2  
9.6  
16.4  
19.4  
25.1  
29.0  
4
3SK230  
GPS AND NF TEST CIRCUIT AT f = 470 MHz  
VG2S  
1 000 pF  
22 k  
1 000 pF  
Ferrite Beads  
40 pF OUTPUT  
L2  
INPUT 40 pF  
50 Ω  
50 Ω  
L1  
1 000 pF  
15 pF  
15 pF  
1 000 pF  
22 kΩ  
L3  
1 000 pF  
1 000 pF  
V
G1S  
V
DS  
L
L
L
1
: φ1.2 mm U.E.W φ5 mm IT  
φ
φ
2: 1.2 mm U.E.W 5 mm IT  
3: REC 2.2  
µ
H
NF TEST CIRCUIT AT f = 55 MHz  
VG2S  
V
DS  
RFC  
2.2 k  
Ferrite  
Beads  
1 500 pF  
1 500 pF  
1 000 pF  
OUTPUT  
27 pF  
INPUT  
27 pF  
47 kΩ  
3.3 kΩ  
3.3 kΩ  
50 Ω  
47 kΩ  
50 Ω  
1 000 pF  
VG1S  
5
3SK230  
[MEMO]  
6
3SK230  
[MEMO]  
7
3SK230  
[MEMO]  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on  
a customer designated "quality assurance program" for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 96. 5  
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