IXGH12N100 IXGH12N100A
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
TO-247 AD (IXGH) Outline
IC = IC90; VCE = 10 V,
6
10
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
750
80
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
30
Qg
65
8
90 nC
20 nC
45 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
24
td(on)
tri
td(off)
tfi
100
200
ns
ns
Inductive load, TJ = 25°C
Dim. Millimeter
Inches
Min. Max. Min. Max.
IC = IC90, VGE = 15 V, L = 300 mH,
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
VCE = 0.8 VCES, RG = Roff = 120 W
.
850 1000
800 1000
ns
ns
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
12N100
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
,
12N100A
12N100
12N100A
500
2.5
1.5
700
ns
E
F
4.32 5.49 0.170 0.216
Eoff
mJ
5.4
6.2 0.212 0.244
3.0 mJ
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
td(on)
tri
100
200
1.1
ns
ns
J
K
1.0
1.4 0.040 0.055
10.8 11.0 0.426 0.433
Inductive load, TJ = 125°C
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
Eon
td(off)
tfi
mJ
ns
IC = IC90, VGE = 15 V, L = 300 mH
VCE = 0.8 VCES, RG = Roff = 120 W
900
1250
950
3.5
N
1.5 2.49 0.087 0.102
12N100
ns
Remarks: Switching times may
increase for VCE (Clamp) > 0.8
VCES, higher TJ or increased RG
12N100A
12N100
12N100A
ns
Eoff
mJ
mJ
2.2
RthJC
RthCK
1.25 K/W
K/W
0.25
IXGH12N100/A characteristic curves may be found in the IXGH12N100U/AU1
data sheet.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
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