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IXFN39N90V

型号：

IXFN39N90V

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

208 K

下载PDF手册
HiPerFETTM  
Power MOSFET  
VDSS = 900V  
ID25 = 39A  
IXFN39N90  
RDS(on) ≤ 220mΩ  
Single MOSFET Die  
trr  
≤ 250ns  
N-Channel Enhancement Mode  
Avalanche Rated  
miniBLOC, SOT-227  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
900  
900  
V
V
S
VDGR  
G
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
39  
A
A
S
154  
D
IA  
EAS  
TC = 25°C  
TC = 25°C  
39  
4
A
J
G = Gate  
S = Source  
D = Drain  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
5
V/ns  
W
Either Source Terminal at miniBLOC  
can be used as Main or Kelvin Source.  
694  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
VISOL  
50/60 Hz, RMS  
IISOL ≤ 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
z International Standard Package  
z miniBLOC, with Aluminium Nitride  
Isolation  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
z High Current Handling Capability  
z Fast Intrinsic Diode  
Weight  
30  
g
z Avalanche Rated  
z Low Package Inductance  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
VDSS  
VGS = 0V, ID = 3mA  
900  
V
BVDSS  
Temperature Dependence  
3.68  
V/K  
Applications  
VGS(th)  
VGS(th)  
VDS = VGS, ID = 8mA  
Temperature Dependence  
3.0  
5.5  
V
V/K  
z DC-DC Converters  
z Battery Chargers  
-0.009  
z Switch-Mode and Resonant-Mode  
Power Supplies  
IGSS  
IDSS  
VGS = ±20V, VDS = 0V  
±200 nA  
VDS = VDSS, VGS = 0V  
100 μA  
2 mA  
z DC Choppers  
TJ = 125°C  
z Temperture and Lighting Controls  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
220 mΩ  
DS98628C(6/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXFN39N90  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B miniBLOC (IXFN)  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 15V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
30  
45  
S
Ciss  
Coss  
Crss  
9200  
1360  
380  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
45  
68  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0 .5 • ID25  
RG = 1Ω (External)  
125  
30  
(M4 screws (4x) supplied)  
Qg(on)  
Qgs  
390  
65  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
190  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
39  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
154  
1.3  
trr  
250 ns  
IF = 39A, -di/dt = -100A/μs  
QRM  
IRM  
2.0  
9.0  
μC  
VR = 100V, VGS = 0V  
A
Note  
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFN39N90  
Figure 2. Output Characteristics at 125OC  
Figure 1. Output Characteristics at 25OC  
45  
40  
35  
30  
25  
20  
15  
10  
5
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = 125OC  
VGS = 9V  
TJ = 25OC  
VGS = 9V  
8V  
7V  
6V  
8V  
7V  
6V  
5V  
5V  
4V  
4V  
0
0
2
4
6
8
10 12 14 16 18 20  
0
2
4
6
8
10 12 14 16 18 20  
VDS - Volts  
VDS - Volts  
Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
VGS = 10V  
VGS = 10V  
TJ = 125OC  
ID = 39A  
ID =19.5A  
TJ = 25OC  
0
10 20 30 40 50 60 70 80  
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees C  
Figure 5. Drain Current vs. Case Temperature  
Figure 6. Admittance Curves  
40  
35  
30  
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
TJ = 125oC  
TJ = 25oC  
0
-50 -25  
0
25 50 75 100 125 150  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
TC - Degrees C  
VGS - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXFN39N90  
Figure 8. Capacitance Curves  
Figure 7. Gate Charge  
18  
16  
14  
12  
10  
8
10  
8
Ciss  
V
DS = 450 V  
f = 100kHz  
I
I
D = 19.50A  
G = 10 mA  
6
4
6
4
2
Coss  
2
Crss  
0
0
0
5
10 15 20 25 30 35 40  
0
50 100 150 200 250 300 350 400  
VDS - Volts  
Gate Charge - nC  
Figure 9. Forward Voltage Drop of the Intrinsic Diode  
100  
80  
60  
40  
20  
0
VGS = 0V  
TJ = 125OC  
TJ = 25OC  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
VSD - Volts  
Figure 10. Transient Thermal Resistance  
1.000  
0.100  
0.010  
0.001  
Single Pulse  
10-4  
10-3  
10-2  
10-1  
100  
101  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_39N90(9Y)  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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