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4N38A-SMT&R

型号：

4N38A-SMT&R

品牌：

ISOCOM[ ISOCOM COMPONENTS ]

页数：

3 页

PDF大小：

70 K

下载PDF手册
4N38X, 4N38AX  
4N38, 4N38A  
OPTICALLY COUPLED  
ISOLATOR  
PHOTOTRANSISTOR OUTPUT  
APPROVALS  
Dimensions in mm  
2.54  
z
ULrecognised,FileNo.E91231  
1
6
5
Package Code " GG "  
7.0  
6.0  
2
3
'X'SPECIFICATIONAPPROVALS  
VDE 0884 in 3 available lead form : -  
- STD  
4
z
z
1.2  
3.0  
- G form  
7.62  
6.62  
7.62  
0.26  
-SMDapprovedtoCECC00802  
CertifiedtoEN60950by :-  
Nemko-CertificateNo.P01102464  
4.0  
3.0  
13°  
Max  
0.5  
3.35  
0.5  
DESCRIPTION  
The4N38, 4N38A series of optically coupled  
isolators consist of infrared light emitting diode  
and NPN silicon photo transistor in a standard 6  
pin dual in line plastic package.  
ABSOLUTEMAXIMUMRATINGS  
(25°Cunlessotherwisespecified)  
Storage Temperature  
OperatingTemperature  
Lead SolderingTemperature  
-55°Cto+150°C  
-55°Cto+100°C  
FEATURES  
z
Options :-  
10mm lead spread - add G after part no.  
Surface mount - add SM after part no.  
Tape&reel - add SMT&R after part no.  
HighBV (80Vmin)  
(1/16inch(1.6mm)fromcasefor10secs) 260°C  
INPUTDIODE  
z
z
z
z
HighIsolCaEtiOonVoltage(5.3kVRMS,7.5kV )  
All electrical parameters 100% tested PK  
Custom electrical selections available  
ForwardCurrent  
ReverseVoltage  
Power Dissipation  
60mA  
6V  
105mW  
APPLICATIONS  
z
z
z
z
DCmotorcontrollers  
Industrial systems controllers  
Measuring instruments  
Signal transmission between systems of  
different potentials and impedances  
OUTPUTTRANSISTOR  
Collector-emitterVoltageBVCEO  
Collector-baseVoltageBV  
Emitter-collectorVoltageBCVBOECO  
CollectorCurrent  
80V  
80V  
6V  
50mA  
OPTION G  
OPTION SM  
SURFACEMOUNT  
Power Dissipation  
160mW  
7.62  
POWERDISSIPATION  
Total Power Dissipation  
(deratelinearly2.67mW/°Cabove25°C)  
200mW  
0.6  
0.1  
1.25  
0.75  
0.26  
10.16  
10.46  
9.86  
ISOCOMCOMPONENTS2004LTD  
Unit25B, ParkViewRoadWest,  
ParkView Industrial Estate, Brenda Road  
Hartlepool,Cleveland,TS251UD  
Tel:(01429)863609 Fax:(01429)863581  
17/7/08  
DB90047  
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )  
PARAMETER  
MIN TYP MAX UNITS  
TEST CONDITION  
Input  
Forward Voltage (VF)  
1.2  
1.5  
10  
V
IF = 10mA  
ReverseCurrent(IR)  
μA  
V
VR =6V  
Output  
Collector-emitter Breakdown (BV  
)
80  
IC = 1mA  
( note C2EO)  
Collector-base Breakdown (BVCBO  
Emitter-collector Breakdown (BVECO  
)
80  
6
V
V
nA  
nA  
IC = 100μA  
IE = 100μA  
VCE = 60V  
VCE = 60V  
)
)
Collector-emitter Dark Current (ICEO  
Collector-base Dark Current (ICBO  
50  
20  
)
Coupled Current Transfer Ratio (CTR)  
Collector-emitter Saturation VoltageVCE(SAT)  
20  
%
V
10mA IF , 10V VCE  
20mA IF , 4mA IC  
1.0  
Input to Output Isolation Voltage VISO 5300  
7500  
VRMS  
VPK  
See note 1  
See note 1  
Input-output Isolation Resistance RISO 5x1010  
Ω
VIO = 500V (note 1)  
Response Time (rise)  
ResponseTime(fall)  
2
2
μs  
μs  
VCC =5V,  
IF=10mA,RL =75Ω  
(FIG 1)  
Note 1  
Note 2  
Measured with input leads shorted together and output leads shorted together.  
Special Selections are available on request. Please consult the factory.  
VCC  
Input  
ton  
toff  
RL = 75Ω  
tf  
tr  
Output  
Output  
10%  
10%  
90%  
90%  
FIG 1  
DB90047m-AAS/A3  
17/7/08  
Collector Power Dissipation vs. Ambient Temperature  
Relative Current Transfer Ratio  
vs. Forward Current  
200  
2.8  
2.4  
150  
100  
2.0  
1.6  
1.2  
0.8  
50  
0
V
= 1V  
TACE= 25°C  
0.4  
0
1
2
5
10  
20  
50  
-30  
0
25  
50  
75  
100 125  
Forward current IF (mA)  
Ambient temperature TA ( °C )  
Forward Current vs. Ambient Temperature  
Relative Current Transfer Ratio  
vs. Forward Current  
80  
70  
1.4  
1.2  
60  
1.0  
0.8  
50  
40  
30  
20  
0.6  
0.4  
V
= 10V  
TACE= 25°C  
0.2  
0
10  
-30  
0
25  
50  
75  
100 125  
1
2
5
10  
20  
50  
Ambient temperature TA ( °C )  
Forward current IF (mA)  
Collector-emitter Saturation  
Voltage vs. Ambient Temperature  
Relative Current Transfer Ratio  
vs. Ambient Temperature  
0.28  
0.24  
1.5  
1.0  
IF = 10mA  
VCE = 10V  
I = 20mA  
IFC = 4mA  
0.20  
0.16  
0.12  
0.08  
0.5  
0
0.04  
0
-30  
0
25  
50  
75  
100  
-30  
0
25  
50  
75  
100  
Ambient temperature TA ( °C )  
Ambient temperature TA ( °C )  
DB90047m-AAS/A3  
17/7/08  
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