SOT223 PNP SILICON PLANAR
DARLINGTON TRANSISTORS
FZTA63
FZTA64
ISSUE 4 MARCH 1996
✪
4
PARTMARKING DETAILS:
COMPLIMENTARY TYPES:
FULL DEVICE TYPE
3
FZTA63 = FZTA13
FZTA64 = FZTA14
2
1
SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-30
-30
Collector-Emitter Voltage
Emitter-Base Voltage
V
-10
V
Peak Pulse Current
-800
mA
mA
mA
W
Continuous Collector Current
Peak Base Current
IC
-500
IBM
-200
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
2
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
MAX.
UNIT
V
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -30
IC=-10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
-30
-10
V
IC=-10mA, IB=0*
IE=-10µA, IC=0
VCB=-30V, IE=0
VEB=-10V, IC=0
Emitter-Base Breakdown
Voltage
V
Collector Cut-Off
Current
-100
nA
Emitter Cut-Off Current
IEBO
-100
-1.5
nA
V
Collector-Emitter Saturation VCE(sat)
Voltage
IC=-100mA, IB=-0.1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-2.0
V
IC=-100mA, IB=-0.1mA*
Static Forward
Current Transfer
Ratio
FZTA63
FZTA64
hFE
5K
10K
IC=-10mA, VCE=-5V
IC=-100mA, VCE=-5V*
10K
20K
IC=-10mA, VCE=-5V
IC=-100mA, VCE=-5V*
Transition
Frequency
fT
125
MHz
IC=-50mA, VCE=-5V
f=20MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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