HiPerFASTTM IGBT
V
= 600 V
= 42 A
= 2.5 V
= 60 ns
IXGR 24N60C
CES
ISOPLUS247TM
I
C25
V
t
(Electrically Isolated Back Surface)
CE(sat)
fi(typ)
Preliminary data sheet
Symbol
TestConditions
Maximum Ratings
ISOPLUS 247
E153432
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
E
Isolated Backside*
IC25
IC110
ICM
TC = 25°C
42
22
80
A
A
A
TC = 110°C
TC = 25°C, 1 ms
G = Gate,
E=Emitter
C = Collector
SSOA
VGE = 15 V, TVJ = 125°C, RG = 22 Ω
ICM = 48
A
(RBSOA)
Clamped inductive load, L = 100 µH
@ 0.8 VCES
* Patent pending
PC
TC = 25°C
80
W
TJ
-40 ... +150
150
°C
°C
°C
Features
TJM
Tstg
l
-40 ... +150
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOSTM process
MOS Gate turn-on
l
l
l
l
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
VISOL
50/60 Hz, RMS, t = 1minute leads-to-tab
2500
5
V
g
- drive simplicity
Weight
Applications
l
Uninterruptible power supplies (UPS)
Symbol
BVCES
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
l
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
l
l
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
600
2.5
V
V
l
DC choppers
VGE(th)
ICES
5.0
Advantages
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 150°C
200 µA
mA
1
l
Easy assembly
l
High power density
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
2.5 V
l
Very fast switching speeds for high
frequency applications
VCE(sat)
IC = I , V = 15 V (see note 1)
2.1
T
GE
© 2002 IXYS All rights reserved
98706 (02/02)
