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IXGH41N60

型号:

IXGH41N60

描述:

超低VCE ( SAT ) IGBT[ Ultra-Low VCE(sat) IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

37 K

Ultra-Low VCE(sat) IGBT  
IXGH 41N60  
VCES = 600 V  
IC25 = 76 A  
VCE(sat) = 1.6 V  
Symbol  
TestConditions  
MaximumRatings  
TO-247 AD  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
76  
41  
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
152  
G = Gate,  
C = Collector,  
E = Emitter,  
TAB = Collector  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 10 W  
Clamped inductive load, L = 100 mH  
ICM = 76  
@ 0.8 VCES  
A
PC  
TC = 25°C  
200  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
• Internationalstandardpackage  
JEDEC TO-247 AD  
• Newest generation HDMOSTM  
process  
Md  
Mountingtorque(M3)  
1.13/10 Nm/lb.in.  
Weight  
6
g
• Low VCE(sat)  
- forminimumon-stateconduction  
losses  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
• Highcurrenthandlingcapability  
• MOS Gate turn-on  
- drive simplicity  
Applications  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Solid state relays  
• Lightingcontrols  
• Temperatureregulators  
BVCES  
VGE(th)  
IC = 250 mA, VGE = 0 V  
IC = 250 mA, VCE = VGE  
600  
2.5  
V
V
5
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200 mA  
mA  
Advantages  
1
• Easy to mount with 1 screw  
(isolatedmountingscrewhole)  
• Low losses, high efficiency  
• High power density  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
1.6  
VCE(sat)  
IC = IC90, VGE = 15 V  
V
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
97546(1/98)  
1 - 2  
IXGH 41N60  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD (IXGH) Outline  
IC = IC90; VCE = 10 V,  
19  
28  
S
Pulse test, t £ 300 ms, duty cycle £ 2 %  
Cies  
Coes  
Cres  
2750  
206  
55  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
120  
25  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
40  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
30  
30  
ns  
ns  
ns  
Dim. Millimeter  
Inches  
IC = IC90, VGE = 15 V, L = 100 mH,  
VCE = 0.8 VCES, RG = Roff = 10 W  
Min. Max. Min. Max.  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
600  
450  
8
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
ns  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
Eoff  
mJ  
E
F
4.32 5.49 0.170 0.216  
5.4  
6.2 0.212 0.244  
td(on)  
tri  
40  
40  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 100 mH  
VCE = 0.8 VCES, RG = Roff = 10 W  
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
Eon  
td(off)  
tfi  
0.3  
800  
600  
15  
mJ  
ns  
J
1.0  
1.4 0.040 0.055  
K
10.8 11.0 0.426 0.433  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
ns  
N
1.5 2.49 0.087 0.102  
Eoff  
mJ  
RthJC  
RthCK  
0.62 K/W  
K/W  
0.25  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 2  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
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