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VUO84-16NO7

型号：

VUO84-16NO7

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

161 K

下载PDF手册
VUO84-16NO7  
3~  
Rectifier  
Standard Rectifier Module  
VRRM  
IDAV  
IFSM  
V
= 1600  
90 A  
=
=
750 A  
3~ Rectifier Bridge  
Part number  
VUO84-16NO7  
-
~ ~ ~  
+
PWS-D Flat  
Package:  
Features / Advantages:  
Applications:  
● Package with DCB ceramic  
● Improved temperature and power cycling  
● Planar passivated chips  
● Very low forward voltage drop  
● Very low leakage current  
● Diode for main rectification  
● Industry standard outline  
● RoHS compliant  
● Easy to mount with two screws  
● Height: 17 mm  
● For three phase bridge configurations  
● Supplies for DC power equipment  
● Input rectifiers for PWM inverter  
● Battery DC power supplies  
● Base plate: Copper  
● Field supply for DC motors  
internally DCB isolated  
● Advanced power cycling  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130410a  
© 2013 IXYS all rights reserved  
VUO84-16NO7  
Ratings  
Rectifier  
Conditions  
Symbol  
VRSM  
Definition  
min. typ. max. Unit  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 150°C  
TVJ = 25°C  
1700  
1600  
100  
V
V
max. non-repetitive reverse blocking voltage  
max. repetitive reverse blocking voltage  
VRRM  
IR  
reverse current  
VR = 1600 V  
VR = 1600 V  
µA  
1.5 mA  
forward voltage drop  
VF  
30  
1.08  
V
V
V
V
A
IF =  
A
1.35  
0.99  
1.33  
90  
IF = 90 A  
IF = 30 A  
IF = 90 A  
TC = 115°C  
rectangular  
TVJ  
=
°C  
125  
bridge output current  
TVJ = 150°C  
TVJ = 150°C  
IDAV  
d = ⅓  
VF0  
0.78  
6
V
threshold voltage  
slope resistance  
for power loss calculation only  
rF  
mΩ  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
Ptot  
0.9 K/W  
K/W  
0.4  
TC = 25°C  
TVJ = 45°C  
VR = 0 V  
135  
750  
810  
640  
690  
W
A
A
A
A
total power dissipation  
max. forward surge current  
IFSM  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
VR = 400 V; f = 1 MHz  
TVJ = 150°C  
VR = 0 V  
value for fusing  
I²t  
TVJ = 45°C  
VR = 0 V  
2.82 kA²s  
2.73 kA²s  
2.05 kA²s  
1.98 kA²s  
pF  
TVJ = 150°C  
VR = 0 V  
CJ  
TVJ = 25°C  
27  
junction capacitance  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130410a  
© 2013 IXYS all rights reserved  
VUO84-16NO7  
Ratings  
Package PWS-D Flat  
Symbol  
IRMS  
Definition  
Conditions  
per terminal  
min. typ. max.  
150  
Unit  
A
°C  
°C  
g
RMS current  
Tstg  
-40  
-40  
125  
150  
storage temperature  
virtual junction temperature  
TVJ  
Weight  
118  
MD  
4.25  
4.25  
9.5  
5.75 Nm  
mounting torque  
terminal torque  
M
5.75 Nm  
T
terminal to terminal  
terminal to backside  
dSpp/App  
dSpb/Apb  
mm  
mm  
V
creepage distance on surface | striking distance through air  
13.0  
3000  
2500  
t = 1 second  
V
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL ≤ 1 mA  
t = 1 minute  
V
Logo  
Made in Germany  
Circuit Diagram  
Date  
Code  
YCW Lot#  
XXX XX-XXXXX  
Marking on product  
Ordering  
Standard  
Part Number  
Marking on Product  
Delivery Mode  
Box  
Quantity Code No.  
10 508510  
VUO84-16NO7  
VUO84-16NO7  
Similar Part  
Package  
Voltage class  
VUO82-16NO7  
PWS-D  
1600  
TVJ = 150°C  
* on die level  
Equivalent Circuits for Simulation  
Rectifier  
V0  
I
R0  
threshold voltage  
slope resistance *  
V0 max  
R0 max  
0.78  
4.8  
V
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130410a  
© 2013 IXYS all rights reserved  
VUO84-16NO7  
Outlines PWS-D Flat  
Max. allowed screw-in depth: 6 mm  
20  
20  
2,5  
17,5  
B
C D  
A
E
10  
23  
48  
54  
60  
72  
-
~ ~ ~  
+
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130410a  
© 2013 IXYS all rights reserved  
VUO84-16NO7  
Rectifier  
120  
10000  
50 Hz  
0.8 x V RRM  
VR = 0 V  
600  
500  
100  
TVJ = 45°C  
80  
I2t  
IF  
TVJ = 45°C  
TVJ = 150°C  
60  
1000  
[A2s]  
IFSM  
[A]  
400  
TVJ = 150°C  
40  
20  
[A]  
TVJ  
=
125°C  
150°C  
300  
TVJ = 25°C  
1.2  
0
0.4  
100  
0.001  
0.010  
0.100  
1.000  
0.8  
1.6  
1
10  
t [ms]  
VF [V]  
t [s]  
Fig. 2 Surge overload current  
Fig. 3 I2t versus time per diode  
Fig. 1 Forward current versus  
voltage drop per diode  
40  
30  
20  
10  
0
120  
100  
80  
RthJA  
:
DC =  
1
0.5  
DC =  
1
0.6 KW  
0.8 KW  
0.4  
1
2
4
8
KW  
KW  
KW  
KW  
0.5  
0.33  
0.17  
0.08  
0.4  
IF(AV)M  
0.33  
0.17  
0.08  
Ptot  
[W]  
60  
40  
20  
0
[A]  
0
10  
20  
30  
0
25  
50  
75 100 125 150 175  
0
25 50 75 100 125 150  
TA [°C]  
IdAVM [A]  
TC [°C]  
Fig. 4 Power dissipation vs. direct output current & ambient temperature  
Fig. 5 Max. forward current vs.  
case temperature  
1.0  
0.8  
Constants for ZthJC calculation:  
ZthJC  
0.6  
[K/W]  
i
R
th (K/W)  
ti (s)  
1
2
3
4
5
0.05  
0.14  
0.18  
0.28  
0.25  
0.001  
0.030  
0.070  
0.150  
0.950  
0.4  
0.2  
0.0  
1
10  
100  
1000  
10000  
t [ms]  
Fig. 6 Transient thermal impedance junction to case  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130410a  
© 2013 IXYS all rights reserved  
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