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VUB135-22NO1

型号：

VUB135-22NO1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

176 K

下载PDF手册
VUB135-22NO1  
preliminary  
3~  
Rectifier  
Brake  
Chopper  
Standard Rectifier Module  
VRRM  
V V  
V
113 A  
1.9 V  
= 2200  
= 1700  
CES  
IDAV  
150 A IC25  
=
=
=
=
IFSM  
1100 A VCE(sat)  
3~ Rectifier Bridge + Brake Unit + NTC  
Part number  
VUB135-22NO1  
Backside: isolated  
10+11  
12  
13  
19+20  
NTC  
~6+7  
~4+5  
~2+3  
1
8+9  
18 17 21+22  
E2-Pack  
Features / Advantages:  
● Package with DCB ceramic  
Applications:  
Package:  
● 3~ Rectifier with brake unit  
● Isolation Voltage:  
V~  
3600  
● Improved temperature and power cycling  
● Planar passivated chips  
● Very low forward voltage drop  
● Very low leakage current  
● NTC  
for drive inverters  
● Industry standard outline  
● RoHS compliant  
● Soldering pins for PCB mounting  
● Height: 17 mm  
● Base plate: Copper  
internally DCB isolated  
● Advanced power cycling  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130513c  
© 2013 IXYS all rights reserved  
VUB135-22NO1  
preliminary  
Ratings  
Rectifier  
Conditions  
Symbol  
VRSM  
Definition  
min. typ. max. Unit  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 150°C  
TVJ = 25°C  
2300  
2200  
100  
2
V
V
max. non-repetitive reverse blocking voltage  
max. repetitive reverse blocking voltage  
VRRM  
IR  
reverse current  
VR = 2200 V  
VR = 2200 V  
µA  
mA  
V
forward voltage drop  
VF  
50  
1.20  
1.68  
1.13  
1.74  
150  
IF =  
A
V
IF = 150 A  
IF = 50 A  
IF = 150 A  
TC = 105°C  
rectangular  
TVJ  
=
°C  
V
125  
V
bridge output current  
TVJ = 150°C  
TVJ = 150°C  
A
IDAV  
d = ⅓  
VF0  
0.79  
V
threshold voltage  
slope resistance  
for power loss calculation only  
rF  
6.4 mΩ  
0.5 K/W  
K/W  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
Ptot  
0.1  
TC = 25°C  
TVJ = 45°C  
VR = 0 V  
250  
1.10  
1.19  
935  
W
kA  
kA  
A
total power dissipation  
max. forward surge current  
IFSM  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
VR = 400 V; f = 1 MHz  
TVJ = 150°C  
VR = 0 V  
1.01  
kA  
value for fusing  
I²t  
TVJ = 45°C  
VR = 0 V  
6.05 kA²s  
5.89 kA²s  
4.37 kA²s  
4.25 kA²s  
pF  
TVJ = 150°C  
VR = 0 V  
CJ  
TVJ = 25°C  
37  
junction capacitance  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130513c  
© 2013 IXYS all rights reserved  
VUB135-22NO1  
preliminary  
Ratings  
Brake IGBT  
Symbol  
VCES  
Definition  
collector emitter voltage  
Conditions  
min. typ. max. Unit  
TVJ  
=
25°C  
1700  
±20  
V
V
V
A
A
W
V
V
V
max. DC gate voltage  
VGES  
VGEM  
IC25  
max. transient gate emitter voltage  
collector current  
±30  
TC = 25°C  
TC = 80°C  
TC = 25°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C  
113  
IC  
80  
80  
total power dissipation  
P
tot  
445  
collector emitter saturation voltage  
VCE(sat)  
IC = 75 A; V = 15 V  
1.9 2.13  
2.8  
GE  
gate emitter threshold voltage  
collector emitter leakage current  
VGE(th)  
ICES  
IC = 3 mA; VGE = VCE  
VCE = VCES; VGE = 0 V  
5.2  
5.8  
6.4  
0.6 mA  
mA  
0.6  
gate emitter leakage current  
total gate charge  
IGES  
VGE = ±20 V  
400  
nA  
nC  
ns  
QG(on)  
td(on)  
tr  
VCE = 900 V; V = 15 V; IC = 75 A  
tbd  
220  
100  
880  
200  
30  
GE  
turn-on delay time  
current rise time  
ns  
inductive load  
TVJ = 125°C  
turn-off delay time  
td(off)  
t f  
ns  
VCE = 900 V; IC = 75A  
VGE = ±15 V; RG = 18 Ω  
current fall time  
ns  
turn-on energy per pulse  
turn-off energy per pulse  
reverse bias safe operating area  
Eon  
mJ  
mJ  
Eoff  
25  
RBSOA  
ICM  
VGE = ±15 V; RG = 18 Ω  
TVJ = 125°C  
TVJ = 125°C  
VCEK = 1700 V  
150  
10  
A
short circuit safe operating area  
short circuit duration  
SCSOA  
tSC  
VCE = 900 V; V = ±15 V  
µs  
A
GE  
short circuit current  
ISC  
RG = 18 Ω; non-repetitive  
tbd  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
0.28 K/W  
K/W  
0.10  
Brake Diode  
max. repetitive reverse voltage  
VRRM  
IF25  
IF80  
VF  
TVJ = 25°C  
TC = 25°C  
1700  
tbd  
V
A
A
V
V
forward current  
forward voltage  
reverse current  
33  
TC = 80°C  
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 125°C  
IF = 60A  
VR = VRRM  
3.05  
3.11  
IR  
0.1 mA  
6
mA  
µC  
A
reverse recovery charge  
max. reverse recovery current  
reverse recovery time  
Qrr  
IRM  
trr  
VR = 900 V  
-diF /dt = 400 A/µs  
IF = 60A  
tbd  
40  
TVJ = 125°C  
tbd  
ns  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
0.65 K/W  
K/W  
0.25  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130513c  
© 2013 IXYS all rights reserved  
VUB135-22NO1  
preliminary  
Ratings  
Package E2-Pack  
Symbol  
IRMS  
Definition  
Conditions  
per terminal  
min. typ. max.  
200  
Unit  
A
RMS current  
Tstg  
-40  
-40  
125  
150  
°C  
°C  
g
storage temperature  
virtual junction temperature  
TVJ  
Weight  
MD  
176  
3
6
Nm  
mounting torque  
terminal to terminal  
terminal to backside  
dSpp/App  
dSpb/Apb  
6.0  
12.0  
mm  
mm  
V
creepage distance on surface | striking distance through air  
t = 1 second  
V
3600  
3000  
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL ≤ 1 mA  
t = 1 minute  
V
2D Data Matrix  
XXXXXXXXXX yywwx  
Logo  
UL Part number Date Code Location  
Ordering  
Standard  
Part Number  
Marking on Product  
VUB135-22NO1  
Delivery Mode  
Box  
Quantity Code No.  
503948  
VUB135-22NO1  
6
105  
104  
Temperature Sensor NTC  
Symbol Definition  
Conditions  
TVJ = 25°  
min. typ. max. Unit  
resistance  
R25  
4.75  
5
5.25  
kΩ  
R
temperature coefficient  
3375  
B25/50  
K
[ ]  
103  
TVJ = 150°C  
* on die level  
Equivalent Circuits for Simulation  
Rectifier  
102  
V0  
I
R0  
0
25  
50  
75  
TC [°C]  
100 125 150  
threshold voltage  
slope resistance *  
V0 max  
R0 max  
0.79  
3.3  
V
Typ. NTC resistance vs. temperature  
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130513c  
© 2013 IXYS all rights reserved  
VUB135-22NO1  
preliminary  
Outlines E2-Pack  
Dimmensions w/o tolerances  
acc. DIN ISO 2768-T1-m  
10+11  
12  
13  
19+20  
NTC  
~6+7  
~4+5  
~2+3  
1
8+9  
18 17 21+22  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130513c  
© 2013 IXYS all rights reserved  
VUB135-22NO1  
preliminary  
Rectifier  
900  
800  
700  
600  
500  
400  
104  
200  
TVJ = 125°C  
TVJ 25°C  
=
TVJ= 45°C  
TVJ = 45°C  
150  
I2t  
[A2s]  
IF  
IFSM  
[A]  
TVJ= 150°C  
100  
[A]  
50  
TVJ = 150°C  
50Hz, 80% VRRM  
103  
0
0.0  
0.001  
0.01  
0.1  
1
1
2
3
4
5 6 7 8 910  
0.5  
1.0  
1.5  
[V]  
2.0  
V
t [s]  
t [ms]  
Fig. 3 I2t vs. time per diode  
F
Fig. 1 Forward current vs.  
voltage drop per diode  
Fig. 2 Surge overload current  
vs. time per diode  
140  
DC =  
1
0.5  
RthA:  
80  
60  
40  
20  
0
0.1 K/W  
0.3 K/W  
0.6 K/W  
1.0 K/W  
1.5 K/W  
2.5 K/W  
DC =  
1
0.5  
120  
100  
80  
60  
40  
20  
0
0.4  
0.33  
0.17  
0.08  
0.4  
0.33  
0.17  
0.08  
IdAV  
[A]  
Ptot  
[W]  
0
10 20 30 40 50 60 70  
0
20 40 60 80 100 120 140 160  
0
25 50 75 100 125 150  
IdAVM [A]  
Tamb [°C]  
TC [°C]  
Fig. 4 Power dissipation vs. forward current  
and ambient temperature per diode  
Fig. 5 Max. forward current vs.  
case temperature per diode  
0.6  
0.5  
0.4  
Constants for ZthJC calculation:  
ZthJC  
i
Rth (K/W)  
ti (s)  
[K/W]  
0.2  
1
2
3
4
5
0.040  
0.003  
0.140  
0.120  
0.197  
0.004  
0.010  
0.030  
0.300  
0.080  
0.1  
0.0  
1
10  
100  
1000  
10000  
t [s]  
Fig. 6 Transient thermal impedance junction to case vs. time per diode  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130513c  
© 2013 IXYS all rights reserved  
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